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參數(shù)資料
| 型號： | FCP11N60F |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 600V N-Channel MOSFET |
| 中文描述： | 11 A, 600 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 836K |
| 代理商： | FCP11N60F |
2005 Fairchild Semiconductor Corporation
FCP11N60F/FCPF11N60F Rev. A
1
www.fairchildsemi.com
F
SuperF E T
TM
FCP11N60F
/FCPF11N60F
600V N-Channel MOSFET
Features
650V @T
J
= 150°C
Typ. R
DS(on)
= 0.32
Fast Recovery Type ( t
rr
= 120ns)
Ultra Low Gate Charge (typ. Q
g
= 40nC)
Low Effective Output Capacitance (typ. C
oss
eff.=95pF)
100% avalanche tested
Description
SuperFET
TM
is, Farichild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
Absolute Maximum Ratings
* Drain current limited by maximum junction termperature.
Thermal Characteristics
! "
!
!
S
!
"
"
D
G
TO-220
G
S
D
TO-220F
G
S
D
Symbol
Parameter
FCP11N60F
FCPF11N60F
Units
I
D
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
11
11 *
A
7
7 *
A
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
Drain Current
(Note 1)
33
33 *
A
Gate-Source Voltage
±
30
V
Single Pulsed Avalanche Energy
(Note 2)
340
mJ
Avalanche Current
(Note 1)
11
A
Repetitive Avalanche Energy
(Note 1)
12.5
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation (T
C
= 25°C)
125
36 *
W
- Derate above 25°C
1.0
0.29 *
W/°C
T
J
, T
STG
T
L
Operating and Storage Temperature Range
-55 to +150
°C
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
300
°C
Symbol
Parameter
FCP11N60F
FCPF11N60F
Units
R
θ
JC
R
θ
CS
R
θ
JA
Thermal Resistance, Junction-to-Case
1.0
3.5
°C
/
W
Thermal Resistance, Case-to-Sink
0.5
--
°C
/
W
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°C
/
W
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FCP11N60N | 功能描述:MOSFET SupreMOS 11A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FCP11N60N_F102 | 制造商:Fairchild 功能描述:600V N-Channel MOSFET SupreMOS |
| FCP11N65 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FCP1206C123G | 功能描述:薄膜電容器 .012uF 50V 2% RoHS:否 制造商:Cornell Dubilier 產(chǎn)品類型: 電介質(zhì):Polyester 電容:0.047 uF 容差:10 % 電壓額定值:100 V 系列:225P 工作溫度范圍:- 55 C to + 85 C 端接類型:Radial 引線間隔:9.5 mm |
| FCP1206C123G-H1 | 功能描述:薄膜電容器 .012uF 50V 2% RoHS:否 制造商:Cornell Dubilier 產(chǎn)品類型: 電介質(zhì):Polyester 電容:0.047 uF 容差:10 % 電壓額定值:100 V 系列:225P 工作溫度范圍:- 55 C to + 85 C 端接類型:Radial 引線間隔:9.5 mm |
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