參數(shù)資料
型號(hào)： FCP4N60
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 600V N-Channel MOSFET
中文描述： 3.9 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： TO-220, 3 PIN
文件頁(yè)數(shù)： 1/8頁(yè)
文件大小： 758K
代理商： FCP4N60
F
2007 Fairchild Semiconductor Corporation
FCP4N60 Rev. A
1
www.fairchildsemi.com
January 2007
SuperFET
TM
FCP4N60
600V N-Channel MOSFET
Features
650V @T
J
= 150°C
Typ. R
DS(on)
= 1.0
Ω
Ultra low gate charge (typ. Q
g
= 12.8nC)
Low effective output capacitance (typ. C
oss
.eff = 32pF)
100% avalanche tested
Description
SuperFET
TM
is, Farichild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
Absolute Maximum Ratings
Thermal Characteristics
D
G
S
TO-220
FCP Series
G
S
D
Symbol
Parameter
FCP4N60
Unit
V
DSS
I
D
Drain-Source Voltage
600
V
Drain Current
- Continuous (T
C
= 25
°
C)
- Continuous (T
C
= 100
°
C)
- Pulsed
3.9
2.5
A
A
I
DM
Drain Current
(Note 1)
11.7
A
V
GSS
E
AS
I
AR
E
AR
dv/dt
Gate-Source voltage
±
30
V
Single Pulsed Avalanche Energy
(Note 2)
128
mJ
Avalanche Current
(Note 1)
3.9
A
Repetitive Avalanche Energy
(Note 1)
5.0
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation
(T
C
= 25
°
C)
- Derate above 25
°
C
50
0.4
W
W/
°
C
T
J,
T
STG
T
L
Operating and Storage Temperature Range
-55 to +150
°
C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
°
C
Symbol
Parameter
FCP4N60
Unit
R
θ
JC
R
θ
JA
Thermal Resistance, Junction-to-Case
2.5
°
C/W
Thermal Resistance, Junction-to-Ambient
83
°
C/W
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