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參數(shù)資料
| 型號： | DS1963L-F5 |
| 廠商： | DALLAS SEMICONDUCTOR |
| 元件分類： | Memory IC:Other |
| 英文描述： | SPECIALTY MEMORY CIRCUIT, MEDB2 |
| 封裝： | MICROCAN-2 |
| 文件頁數(shù)： | 22/24頁 |
| 文件大?。?/td> | 482K |
| 代理商： | DS1963L-F5 |
DS1963L
7 of 24
Read Memory [F0H]
The read memory command may be used to read the entire memory. After issuing the command, the
master must provide the 2-byte target address. After the 2 bytes, the master reads data beginning from the
target address and may continue until the end of memory, at which point logic 1s will be read. It is
important to realize that the target address registers will contain the address provided. The ending
offset/data status byte is unaffected.
The hardware of the DS1963L provides a means to accomplish error-free writing to the memory section.
To safeguard reading data in the 1-Wire environment and to simultaneously speed up data transfers, it is
recommended to packetize data into data packets of the size of one memory page each. Such a packet
would typically store a 16-bit CRC with each page of data to ensure rapid, error-free data transfers that
eliminate having to read a page multiple times to determine if the received data is correct or not. (See the
Book of DS19xx iButton Standards, Chapter 7 for the recommended file structure.)
DS1963L MEMORY MAP Figure 5
ADDRESS
0000H TO
001FH
0020H TO
003FH
0040H TO
005FH
0060H TO
007FH
0080H TO
017FH
0180H TO
019FH
01A0H TO
01BFH
01C0H TO
01DFH
01E0H TO
01FFH
NON-MEMORY MAPPED
WRITE-CYCLE COUNTERS
(ACCESSIBLE THROUGH A
SPECIAL READ COMMAND)
32-BYTE INTERMEDIATE STORAGE SCRATCHPAD
32-BYTE FINAL STORAGE NV RAM
FINAL STORAGE NV RAM
32-BYTE FINAL STORAGE NV RAM
page 0
page 1
page 2
page 3
page 4
to page 11
page 12
page 13
page 14
page 15
COUNTER 1
WITH PAGE 12
COUNTER 2
WITH PAGE 13
COUNTER 3
WITH PAGE 14
COUNTER 4
WITH PAGE 15
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DS1963S | SPECIALTY MEMORY CIRCUIT, MEDB2 |
| DS1985-F3 | 2K X 8 EEPROM 3V, RDB2 |
| DS1986-F3 | 64K X 1 OTPROM, MEDB2 |
| DS1986-F5 | 64K X 1 OTPROM, MADB2 |
| DS1991L-F5 | SPECIALTY MEMORY CIRCUIT, MEDB2 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1963L-F5+ | 功能描述:iButton RoHS:否 存儲類型:SRAM 存儲容量:512 B 組織: 工作電源電壓:3 V to 5.25 V 接口類型:1-Wire 最大工作溫度:+ 85 C 尺寸:17.35 mm x 5.89 mm 封裝 / 箱體:F5 MicroCan 制造商:Maxim Integrated |
| DS1963L-F5+W | 功能描述:iButton RoHS:否 存儲類型:SRAM 存儲容量:512 B 組織: 工作電源電壓:3 V to 5.25 V 接口類型:1-Wire 最大工作溫度:+ 85 C 尺寸:17.35 mm x 5.89 mm 封裝 / 箱體:F5 MicroCan 制造商:Maxim Integrated |
| DS1963R-F5+ | 制造商:Maxim Integrated Products 功能描述:- Rail/Tube |
| DS1963S | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:SHA iButton |
| DS1963S+F5 | 制造商:Maxim Integrated Products 功能描述:SHA IBTN 8SOIC - Rail/Tube |
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