參數(shù)資料
型號(hào)： DS1963L-F5
廠商： DALLAS SEMICONDUCTOR
元件分類(lèi)： Memory IC:Other
英文描述： SPECIALTY MEMORY CIRCUIT, MEDB2
封裝： MICROCAN-2
文件頁(yè)數(shù)： 18/24頁(yè)
文件大小： 482K
代理商： DS1963L-F5
DS1963L
3 of 24
DS1963L BLOCK DIAGRAM Figure 1
3V
Lithium
PARASITE POWER
The block diagram (Figure 1) shows the parasite-powered circuitry. This circuitry “steals” power
whenever the I/O input is high. I/O will provide sufficient power as long as the specified timing and
voltage requirements are met. The advantages of parasite power are two-fold: 1) by parasiting off this
input, lithium is conserved and 2) if the lithium is exhausted for any reason, the ROM may still be read
normally.
64-BIT LASERED ROM
Each DS1963L contains a unique ROM code that is 64 bits long. The first 8 bits are a 1-Wire family
code. The next 48 bits are a unique serial number. The last 8 bits are a CRC of the first 56 bits. (See
Figure 3.) The 1-Wire CRC is generated using a polynomial generator consisting of a shift register and
XOR gates as shown in Figure 4. The polynomial is X
8 + X5 + X4 + 1. Additional information about the
Dallas 1-Wire Cyclic Redundancy Check is available in the Book of DS19xx iButton Standards.
The shift register bits are initialized to 0. Then starting with the least significant bit of the family code,
one bit at a time is shifted in. After the 8
th bit of the family code has been entered, then the serial number
is entered. After the 48
th bit of the serial number has been entered, the shift register contains the CRC
value. Shifting in the 8 bits of CRC should return the shift register to all 0s.
DATA
LID
CONTACT
1-WIRE
FUNCTION
CONTROL
64-BIT
LASERED
ROM
PARASITE-POWERED
CIRCUITRY
256-BIT
SCRATCHPAD
MEMORY
FUNCTION
CONTROL
MEMORY
4096-BIT
SRAM
(256-BIT PAGES)
PAGE
WRITE CYCLE
COUNTERS
相關(guān)PDF資料
PDF描述
DS1963S SPECIALTY MEMORY CIRCUIT, MEDB2
DS1985-F3 2K X 8 EEPROM 3V, RDB2
DS1986-F3 64K X 1 OTPROM, MEDB2
DS1986-F5 64K X 1 OTPROM, MADB2
DS1991L-F5 SPECIALTY MEMORY CIRCUIT, MEDB2
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
DS1963L-F5+ 功能描述:iButton RoHS:否 存儲(chǔ)類(lèi)型:SRAM 存儲(chǔ)容量:512 B 組織: 工作電源電壓:3 V to 5.25 V 接口類(lèi)型:1-Wire 最大工作溫度:+ 85 C 尺寸:17.35 mm x 5.89 mm 封裝 / 箱體:F5 MicroCan 制造商:Maxim Integrated
DS1963L-F5+W 功能描述:iButton RoHS:否 存儲(chǔ)類(lèi)型:SRAM 存儲(chǔ)容量:512 B 組織: 工作電源電壓:3 V to 5.25 V 接口類(lèi)型:1-Wire 最大工作溫度:+ 85 C 尺寸:17.35 mm x 5.89 mm 封裝 / 箱體:F5 MicroCan 制造商:Maxim Integrated
DS1963R-F5+ 制造商:Maxim Integrated Products 功能描述:- Rail/Tube
DS1963S 制造商:DALLAS 制造商全稱(chēng):Dallas Semiconductor 功能描述:SHA iButton
DS1963S+F5 制造商:Maxim Integrated Products 功能描述:SHA IBTN 8SOIC - Rail/Tube
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*