參數(shù)資料
型號(hào)： DS1963L-F5
廠商： DALLAS SEMICONDUCTOR
元件分類： Memory IC:Other
英文描述： SPECIALTY MEMORY CIRCUIT, MEDB2
封裝： MICROCAN-2
文件頁(yè)數(shù)： 17/24頁(yè)
文件大小： 482K
代理商： DS1963L-F5
DS1963L
24 of 24
AC ELECTRICAL CHARACTERISTICS OVERDRIVE SPEED
(VPUP=2.8V to 6.0V; -40°C to +70°C)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Time Slot
tSLOT
616
s
Write 1 Low Time
tLOW1
12
s
Write 0 Low Time
tLOW0
616
s
Read Low Time
tLOWR
12
s
Read Data Valid
tRDV
exactly 2
s
Release Time
tRELEASE
01.5
4
s
Read Data Setup
tSU
1
s
5
Recovery Time
tREC
1
s
Reset Time High
tRSTH
48
s
4
Reset Time Low
tRSTL
48
80
s
Presence Detect High
tPDH
26
s
Presence Detect Low
tPDL
824
s
NOTES:
1. All voltages are referenced to ground.
2. VPUP = external pullup voltage.
3. Input load is to ground.
4. An additional reset or communication sequence cannot begin until the reset high time has expired.
5. Read data setup time refers to the time the host must pull the 1-Wire bus low to read a bit. Data is
guaranteed to be valid within 1
s of this falling edge.
6. Capacitance on the data pin could be 800 pF when power is first applied. If a 5 k
resistor is used to
pull up the data line to VPUP, 5
s after power has been applied the parasite capacitance will not affect
normal communications.
7. The reset low time (tRSTL) should be restricted to a maximum of 960
s, to allow interrupt signaling,
otherwise, it could mask or conceal interrupt pulses.
8. VIH is a function of the external pullup resistor and VPUP.
9. Under certain low voltage conditions VILMAX may have to be reduced to as much as 0.5V to always
guarantee a presence pulse.
相關(guān)PDF資料
PDF描述
DS1963S SPECIALTY MEMORY CIRCUIT, MEDB2
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