DDX-4100
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DD
Power Supply
V
i
Voltage on input pins
V
o
Voltage on output pins
T
stg
Storage Temperature
T
a
Ambient operating temperature
THERMAL DATA
Symbol
R
θ
j-a
Thermal resistance Junction to Ambient
RECOMMENDED DC OPERATING CONDITIONS
Symbol
V
DD
Power Supply Voltage
T
j
Operation Junction Temperature
ELECTRICAL CHARACTERISTICS
(V
DD
= 3.3
±
0.3V; T
a
=0 to 70°C; unless otherwise specified)
GENERAL INTERFACE ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test Condition
I
il
Low Level Input Current
Without pull-up/dn device
I
ih
High Level Input Current
Without pull-up/dn device
V
esd
Electrostatic Protection
Leakage < 1μA
DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test
Condition
V
il
Low Level Input Voltage
V
ih
High Level Input Voltage
V
ol
Low Level Output
Voltage
V
oh
High Level Output
Voltage
I
pu
Pull-up current
V
i
= 0V;
V
DD
= 3.3V
R
pu
Equivalent Pull-up
resistance
Tr
Reset Active Time
Tck
Master Clock Period
Note 1: See Table 1 for input pins with pull-up/dn
Note 2: Human Body Model
Note 3: X is the source/sink current under worst-case conditions and is reflected in the name of the I/O cell according
to the drive capability, see Table 1 for values.
Note 4: Min condition: V
DD
= 2.7V; Max condition: V
DD
= 3.6 V
DIGITAL CHARACTERISTICS – S/PDIF RECEIVER
(RXP, RXN pins only)
Symbol
Parameter
Test Condition
Vth
Differential input voltage
Vhyst
Input Hysteresis
Parameter
Value
-0.3 to 4
-0.3 to VDD+0.3
-0.3 to VDD+0.3
-40 to +150
-20 to +85
Unit
V
V
V
°C
°C
Parameter
Value
85
Unit
°C/W
Parameter
Value
3.0 to 3.6V
-20 to 125 °C
Min.
-10
Typ.
Max.
10
Unit
μA
Note
1
Vi – 0V
Vi – V
DD
= 3.6V
-10
10
μA
1
2000
V
2
Min.
Typ.
Max.
Unit
Note
0.2*V
DD
0.4*V
DD
V
V
V
0.8*V
DD
IoI = X mA
3
0.85*V
DD
V
3
-26
-66
-125
μA
4
50
kohm
2*Tck
20.345
ns
ns
Min.
200
Typ.
50
Max.
Unit
mV
mV
Note
4
Details and Specifications are subject to change without notice