型號(hào) 廠商 描述
jantx1n6464us
2 3		 MICROSEMI CORP-SCOTTSDALE 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
msp1n6462us
2 3		 MICROSEMI CORP-SCOTTSDALE 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
msp1n6465us
2 3		 MICROSEMI CORP-SCOTTSDALE 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
mss-60848-h40
2		 SILICON, EXTRA HIGH BARRIER SCHOTTKY, MIXER DIODE
mss-60248-h30
2		 SILICON, EXTRA HIGH BARRIER SCHOTTKY, MIXER DIODE
mss-60148-h20
2		 SILICON, EXTRA HIGH BARRIER SCHOTTKY, MIXER DIODE
mss-60153-b10
2		 SILICON, EXTRA HIGH BARRIER SCHOTTKY, MIXER DIODE
mss-60453-b41
2		 SILICON, EXTRA HIGH BARRIER SCHOTTKY, MIXER DIODE
mss-60244-b20
2		 SILICON, EXTRA HIGH BARRIER SCHOTTKY, MIXER DIODE
mss-60248-b20
2		 SILICON, EXTRA HIGH BARRIER SCHOTTKY, MIXER DIODE
mss-60148-e26
2		 SILICON, EXTRA HIGH BARRIER SCHOTTKY, MIXER DIODE
mss-60cr53-b49
2		 SILICON, K BAND, MIXER DIODE
mss-40cr53-b49
2		 SILICON, K BAND, MIXER DIODE
mss-50cr45-b49
2		 SILICON, K BAND, MIXER DIODE
mswsh-100-30
2 3 4		 700 V, SILICON, PIN DIODE
mtzj30b
2 3 4 5		 30 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-34
mtzj6.8b
2 3 4 5		 6.8 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-34
mur1620ct
2		 8 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB
mur440
2		 4 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD
murb1020cttrrpbf
2 3 4 5 6 7		 VISHAY INTERTECHNOLOGY INC 5 A, 200 V, SILICON, RECTIFIER DIODE
murb2020cttrlpbf
2 3 4 5 6 7 8		 10 A, 200 V, SILICON, RECTIFIER DIODE
murb820-1pbf
2 3 4 5 6 7 8		 8 A, 200 V, SILICON, RECTIFIER DIODE, TO-262AA
murf1620ct
2		 8 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB
murs120/5-e3
2		 VISHAY SEMICONDUCTORS 2 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AA
murs120/5t
2		 VISHAY SEMICONDUCTORS 2 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AA
murs140
2 3 4		 RECTRON LTD 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC
mv1666
 330 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
mv1666
 330 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
mv1662
 250 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
mv206h
 UHF BAND, 30 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
mv206ee
 UHF BAND, 30 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
mv206f
 UHF BAND, 30 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
mv205a
 UHF BAND, 30 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
mv838
2		 68 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
mv839
2		 82 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
mv831
2		 18 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
mz400ft
2 3		 MICROSEMI CORP-LAWRENCE 3 PHASE, 12 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
mz1000f
2 3		 MICROSEMI CORP-LAWRENCE 3 PHASE, 12 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
mz200ft
2 3		 MICROSEMI CORP-LAWRENCE 3 PHASE, 12 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
mz800fs
2 3		 MICROSEMI CORP-LAWRENCE 3 PHASE, 12 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
mz600fs
2 3		 MICROSEMI CORP-LAWRENCE 3 PHASE, 12 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
mz4625rl2
2 3 4 5 6 7 8		 ON SEMICONDUCTOR 5.1 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH
rsb6vp151202
 BARRIER STRIP TERMINAL BLOCK, 1 ROW, 1 DECK
s15vt80
2		 3 PHASE, 15 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
s1kb
2		 LITE-ON SEMICONDUCTOR CORP 1 A, 800 V, SILICON, SIGNAL DIODE
s1k
2 3		 MICROSEMI CORP 1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AA
s1g
2 3		 MICROSEMI CORP 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AA
s1vba60-4000
 1 A, SILICON, BRIDGE RECTIFIER DIODE
s1zas4-4062
 1.2 A, 40 V, SILICON, RECTIFIER DIODE
s1zas4-4102
 1.2 A, 40 V, SILICON, RECTIFIER DIODE