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參數(shù)資料
| 型號： | MURB820-1PBF |
| 元件分類： | 整流器 |
| 英文描述： | 8 A, 200 V, SILICON, RECTIFIER DIODE, TO-262AA |
| 封裝： | TO-262, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 196K |
| 代理商： | MURB820-1PBF |
MUR820, MURB820, MURB820-1
Bulletin PD-20731 rev. C 12/03
2
www.irf.com
VBR, Vr
Breakdown Voltage,
200
-
V
IR = 100A
Blocking Voltage
VF
Forward Voltage
-
0.975
V
IF = 8A
-
0.895
V
IF = 8A, TJ = 150°C
IR
Reverse Leakage Current
-
5
A
VR = VR Rated
-
250
A
TJ = 150°C, VR = VR Rated
CT
Junction Capacitance
-
25
-
pF
VR = 200V
LS
Series Inductance
-
8.0
-
nH
.
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
Measured lead to lead 5mm from package body
trr
ReverseRecoveryTime
--
35
ns
IF = 1.0A, diF/dt = 50A/s, VR = 30V
--
25
IF = 0.5A, IR = 1.0A, IREC = 0.25A
-20
-
TJ = 25°C
34
TJ = 125°C
IRRM
Peak Recovery Current
-
1.7
-
A
TJ = 25°C
-
4.2
-
TJ = 125°C
Qrr
ReverseRecoveryCharge
-
23
-
nC
TJ = 25°C
-75
-
TJ = 125°C
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
I
F = 8A
VR = 160V
diF /dt = 200A/s
Parameters
Min Typ Max Units Test Conditions
Parameters
Min
Typ
Max
Units
TJ
Max. Junction Temperature Range
-
- 65 to 175
°C
TStg
Max.StorageTemperatureRange
-
- 65 to 175
RthJC
Thermal Resistance, Junction to Case
-
3.0
°C/ W
RthJA
Thermal Resistance, Junction to Ambient
-
50
RthCS
Thermal Resistance, Case to Heatsink
-
0.5
-
Wt
Weight
-
2.0
-
g
-
0.07
-
(oz)
Mounting Torque
6.0
-
12
Kg-cm
5.0
-
10
lbf.in
Thermal - Mechanical Characteristics
Mounting Surface, Flat, Smooth and Greased
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