參數(shù)資料
型號(hào)： JANTX1N6464US
廠商： MICROSEMI CORP-SCOTTSDALE
元件分類： TVS二極管 - 瞬態(tài)電壓抑制
英文描述： 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
封裝： HERMETICALLY SEALED, GLASS, D-5B, MELF-2
文件頁數(shù)： 2/3頁
文件大小： 145K
代理商： JANTX1N6464US
Voidless-Hermetically-Sealed Surface
Mount Unidirectional Transient
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
Copyright
2007
4-27-2007 REV B
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
1N6461US thru 1N6468US
1N6
461
US
–
1N6
468
US
ELECTRICAL CHARACTERISTICS
TYPE
BREAK
DOWN
VOLTAGE
V(BR)
MIN.
BREAKDOWN
CURRENT
I (BR)
WORKING
PEAK
VOLTAGE
VWM
MAX
LEAKAGE
CURRENT
ID
MAXIMUM
CLAMPING
VOLTAGE
VC
@ 10/1000 s
MAXIMUM
PEAK PULSE
CURRENT
IPP
@8/20 s
@10/1000 s
MAXIMUM
TEMP.
COEF. OF
V(BR)
Volts
mAdc
Vdc
μAdc
V(pk)
A(pk)
%/
oC
1N6461US
5.6
25
5
3000
9.0
315
56
-.03, +0.04
1N6462US
6.5
20
6
2500
11.0
258
46
0.06
1N6463US
13.6
5
12
500
22.6
125
22
0.085
1N6464US
16.4
5
15
500
26.5
107
19
0.085
1N6465US
27.0
2
24
50
41.4
69
12
.096
1N6466US
33.0
1
30.5
3
47.5
63
11
.098
1N6467US
43.7
1
40.3
2
63.5
45
8
.101
1N6468US
54.0
1
51.6
2
78.5
35
6
.103
SYMBOLS & DEFINITIONS
Symbol
Definition
VBR
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
VWM
Working Peak Voltage: The maximum peak voltage that can be applied over the operating temperature range.
This is also referred to as Standoff Voltage.
ID
Maximum Standoff Current: The maximum current that will flow at the specified voltage and temperature.
VC
Maximum clamping voltage at specified IPP (Peak Pulse Current) at the specified pulse conditions.
PPP
Peak Pulse Power: The peak power dissipation resulting from the peak impulse current IPP.
GRAPHS
FIGURE 1
FIGURE 2
PEAK PULSE POWER vs. PULSE TIME
10/1000 s CURRENT IMPULSE WAVEFORM
相關(guān)PDF資料
PDF描述
MSP1N6462US 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
MSP1N6465US 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
MSS-60848-H40 SILICON, EXTRA HIGH BARRIER SCHOTTKY, MIXER DIODE
MSS-60248-H30 SILICON, EXTRA HIGH BARRIER SCHOTTKY, MIXER DIODE
MSS-60148-H20 SILICON, EXTRA HIGH BARRIER SCHOTTKY, MIXER DIODE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
JANTX1N6465 制造商:Microsemi Corporation 功能描述:TVS SGL UNI-DIR 24V 500W 2PIN E - Bulk 制造商:Microsemi Corporation 功能描述:TVS DIODE 24VWM 41.4VC BPKG AXL 制造商:Microsemi Corporation 功能描述:TVS 500W B-PKG AXIAL
JANTX1N6465US 制造商:Microsemi Corporation 功能描述:Diode TVS Single Uni-Dir 24V 500W 2-Pin E-MELF 制造商:Microsemi Corporation 功能描述:TVS SGL UNI-DIR 24V 500W 2PIN E-MELF - Trays 制造商:Microwave Semiconductor 功能描述: 制造商:Microsemi Corporation 功能描述:TVS UNIDIR 500W 27V 2MA E MELF 制造商:Microsemi Corporation 功能描述:TVS DIODE 24VWM 41.4VC EMELF
JANTX1N6466 制造商:Microsemi Corporation 功能描述:Diode TVS Single Uni-Dir 30.5V 500W 2-Pin Case E 制造商:Semtech Corporation 功能描述:Diode TVS Single Uni-Dir 30.5V 500W 2-Pin 制造商:Microsemi Corporation 功能描述:TVS SGL UNI-DIR 30.5V 500W 2PIN E - Bulk
JANTX1N6466US 制造商:Microsemi Corporation 功能描述:TVS SGL UNI-DIR 30.5V 500W 2PIN MELF - Trays 制造商:Microsemi Corporation 功能描述:TVS UNIDIR 500W 33V 1A E MELF
JANTX1N6467 制造商:Microsemi Corporation 功能描述:Diode TVS Single Uni-Dir 40.3V 500W 2-Pin Case E 制造商:Microsemi Corporation 功能描述:TVS SGL UNI-DIR 40.3V 500W 2PIN E - Bulk 制造商:Microsemi 功能描述:Diode TVS Single Uni-Dir 40.3V 500W 2-Pin Case E
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*