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參數資料
| 型號： | S1KB |
| 廠商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分類： | 二極管(射頻、小信號、開關、功率) |
| 英文描述： | 1 A, 800 V, SILICON, SIGNAL DIODE |
| 封裝： | PLASTIC, SMB, 2 PIN |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 67K |
| 代理商： | S1KB |
S1AB thru S1MB
FEATURES
Glass passivated chip
For surface mounted applications
Low reverse leakage current
Low forward voltage drop
High current capability
Plastic material has UL flammability classification 94V-0
MECHANICAL DATA
Case : Molded plastic
Polarity : Color band denotes cathode
Weight : 0.003 ounces, 0.093 grams
VRMS
VDC
VRRM
I(AV)
IFSM
VF
IR
CJ
Maximum Average Forward
Rectified Current
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load (JEDEC METHOD)
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum forward Voltage at 1.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =125 C
@TJ =25 C
Typical Junction Capacitance (Note 1)
1.0
30
1.1
5.0
100
10
TJ
Operating Temperature Range
-55 to +150
C
TSTG
Storage Temperature Range
-55 to +150
C
Typical Thermal Resistance (Note 2)
R0JL
30
C/W
pF
uA
V
A
V
UNIT
V
CHARACTERISTICS
SYMBOL
@TL =100 C
200
140
200
50
35
50
1000
700
1000
100
70
100
800
560
800
600
420
600
400
280
400
S1AB
S1MB
S1KB
S1JB
S1GB
S1DB
S1BB
SMB
All Dimensions in millimeter
SMB
DIM.
MIN.
MAX.
A
C
D
E
F
G
H
B
4.06
4.57
3.94
3.30
1.96
2.21
0.31
0.15
5.21
5.59
0.05
0.20
2.01
2.50
0.76
1.52
C
B
A
H
E
F
G
D
NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Thermal Resistance Junction to Lead.
REVERSE VOLTAGE - 50 to 1000 Volts
FORWARD CURRENT - 1.0 Ampere
SURFACE MOUNT
GLASS PASSIVATED RECTIFIERS
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
SEMICONDUCTOR
LITE-ON
REV. 3, Apr-2010, KSDB01
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| S1G | 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AA |
| S1VBA60-4000 | 1 A, SILICON, BRIDGE RECTIFIER DIODE |
| S1ZAS4-4062 | 1.2 A, 40 V, SILICON, RECTIFIER DIODE |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| S1KB/BBB | 制造商:Cliff Electronic Components 功能描述:Bulk |
| S1KB-13 | 功能描述:整流器 800V 1A RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| S1KB-13-F | 功能描述:整流器 800V 1A RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| S1K-E3/1T | 功能描述:整流器 1.0 Amp 800 Volt 30A IFSM @ 8.3ms RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| S1K-E3/51T | 功能描述:整流器 1.0 Amp 800 Volt 30A IFSM @ 8.3ms RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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