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參數(shù)資料
| 型號： | MV839 |
| 元件分類： | 變容二極管 |
| 英文描述： | 82 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 |
| 封裝： | GLASS PACKAGE-2 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 94K |
| 代理商： | MV839 |
P.O. BOX 609
ROCKPORT, MAINE 04856 207-236-6076 FAX 207-236-9558
ABRUPT VARACTOR DIODES
MV830 - MV840
PART
CT DIODE CAPACITANCE
Q, QUALITY FACTOR
TR, TUNING RATIO
NUMBER
Vr = 4 Vdc, f = 1 MHz
Vr = 4 Vdc
f = 1 MHz
(pF)
f = 50 MHz
C4V / C25V
MIN
NOM
MAX
MIN
TYP
MIN
TYP
MV830
13.5
15.0
16.5
30
35
1.8
2.00
MV831
16.2
18.0
19.8
25
30
1.8
2.00
MV832
19.8
22.0
24.2
25
30
1.8
2.10
MV833
24.3
27.0
29.7
25
30
1.8
2.10
MV834
29.7
33.0
36.3
20
25
1.9
2.12
MV835
35.1
39.0
42.9
20
25
1.9
2.12
MV836
42.3
47.0
51.7
15
20
1.9
2.15
MV837
50.4
56.0
61.6
15
20
1.9
2.15
MV838
61.2
68.0
74.8
15
20
2.0
2.18
MV839
73.8
82.0
90.2
10
15
2.0
2.18
MV840
90.0
100.0
110.0
10
15
2.0
2.18
Package Style
DO-7
DC Power Dissipation
@ Ta = 25° C
400 mW
Min Reverse Breakdown Voltage
@ Ir = 10 A
30 Vdc
Max Reverse Current (IR)
@ 25 Vdc
0.2 A
Operating Temperature (Topr)
-65 to + 150° C
Storage Temperature (Tstg)
-65 to + 200 ° C
unction Temperature
+ 175° C
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| MV831 | 18 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 |
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| MZ1000F | 3 PHASE, 12 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE |
| MZ200FT | 3 PHASE, 12 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MV83C151C-12 | 制造商:TEMIC 制造商全稱:TEMIC Semiconductors 功能描述:CMOS 0 to 36 MHz Single Chip 8-bit Microcontroller |
| MV83C151C-16 | 制造商:TEMIC 制造商全稱:TEMIC Semiconductors 功能描述:CMOS 0 to 36 MHz Single Chip 8-bit Microcontroller |
| MV83C151C-20 | 制造商:TEMIC 制造商全稱:TEMIC Semiconductors 功能描述:CMOS 0 to 36 MHz Single Chip 8-bit Microcontroller |
| MV83C151C-25 | 制造商:TEMIC 制造商全稱:TEMIC Semiconductors 功能描述:CMOS 0 to 36 MHz Single Chip 8-bit Microcontroller |
| MV83C151C-30 | 制造商:TEMIC 制造商全稱:TEMIC Semiconductors 功能描述:CMOS 0 to 36 MHz Single Chip 8-bit Microcontroller |
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