參數資料
型號： MSP1N6462US
廠商： MICROSEMI CORP-SCOTTSDALE
元件分類： TVS二極管 - 瞬態(tài)電壓抑制
英文描述： 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
封裝： HERMETICALLY SEALED, GLASS, D-5B, MELF-2
文件頁數： 1/3頁
文件大?。?/td> 145K
代理商： MSP1N6462US
Voidless-Hermetically-Sealed Surface
Mount Unidirectional Transient
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Copyright
2007
4-27-2007 REV B
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
1N6461US thru 1N6468US
1N6
461
US
–
1N6
468
US
DESCRIPTION
APPEARANCE
This surface mount series of industry recognized voidless-hermetically-sealed
Unidirectional Transient Voltage Suppressor (TVS) designs is military qualified to MIL-
PRF-19500/551 and are ideal for high-reliability applications where a failure cannot be
tolerated. They provide a Working Peak “Standoff” Voltage selection from 5.0 to 51.6
Volts with 500 W ratings. They are very robust in hard-glass construction and also use
an internal metallurgical bond identified as Category I for high reliability applications.
The 500 W series is military qualified to MIL-PRF-19500/551. These devices are also
available in axial-leaded packages for thru-hole mounting by deleting the “US” suffix
(see separate data sheet for 1N6461 thru 1N6468). Microsemi also offers numerous
other TVS products to meet higher and lower peak pulse power and voltage ratings in
both through-hole and surface-mount packages.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
High surge current and peak pulse power provides
transient voltage protection for sensitive circuits
Triple-layer passivation
Internal “Category I” metallurgical bonds
Voidless hermetically sealed glass package
JAN/TX/TXV military qualifications available per MIL-
PRF-19500/551 by adding JAN, JANTX, or JANTXV
prefix
Further options for screening in accordance with MIL-
PRF-19500 for JANS by using a “MSP” prefix, e.g.
MSP6462, MSP6468, etc.
Axial-leaded equivalents are also available in a
square-end-cap MELF configuration (see separate
data sheet for 1N6461 thru 1N6168)
Military and other high reliability transient protection
Extremely robust construction
Working Peak “Standoff” Voltage (V
WM) from 5.0 to
51.6 V
Available as 500 W Peak Pulse Power (P
PP)
ESD and EFT protection per IEC61000-4-2 and
IEC61000-4-4 respectively
Secondary lightning protection per select levels in
IEC61000-4-5
Square-end-cap terminals for easy placement
Nonsensitive to ESD per MIL-STD-750 Method
1020
Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
Operating & Storage Temperature: -55oC to +175oC
Peak Pulse Power at 25oC: 500 Watts @ 10/1000 s
(also see Figures 1,2 and 4)
Impulse repetition rate (duty factor): 0.01%
Forward Surge Current: 80 Amps@ 8.33 ms one-half
sine wave
Forward Voltage: 1.5 V @ 1 Amp dc and 4.8 V at 100
Amps (pulsed)
Steady-State Power: 2.5 Watts @ T
A = 25
oC (see
note below and Figure 4)
Thermal Resistance Junction to End Cap: 20 oC/W
Solder Temperatures: 260oC for 10 s (maximum)
CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
TERMINATIONS: End caps are Copper with
Tin/Lead (Sn/Pb) finish. Note; Previous inventory
had solid silver end caps with Tin/Lead (Sn/Pb) finish.
MARKING: None
POLARITY: Cathode band
Tape & Reel option: Standard per EIA-481-B
Weight: 539 mg
See package dimensions on last page
NOTE: Steady-state power ratings with reference to ambient are for PC boards where thermal resistance from
mounting point to ambient is sufficiently controlled where TJ(MAX) is not exceeded.
Package “E”
(or “D-5B”)
相關PDF資料
PDF描述
MSP1N6465US 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
MSS-60848-H40 SILICON, EXTRA HIGH BARRIER SCHOTTKY, MIXER DIODE
MSS-60248-H30 SILICON, EXTRA HIGH BARRIER SCHOTTKY, MIXER DIODE
MSS-60148-H20 SILICON, EXTRA HIGH BARRIER SCHOTTKY, MIXER DIODE
MSS-60153-B10 SILICON, EXTRA HIGH BARRIER SCHOTTKY, MIXER DIODE
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