參數(shù)資料
型號(hào)： CY8CLED16P01-28PVXI
廠商： CYPRESS SEMICONDUCTOR CORP
元件分類： 微控制器/微處理器
英文描述： SPECIALTY MICROPROCESSOR CIRCUIT, PDSO28
封裝： 0.210 INCH, LEAD FREE, SSOP-28
文件頁(yè)數(shù)： 28/58頁(yè)
文件大?。?/td> 837K
代理商： CY8CLED16P01-28PVXI
CY8CLED16P01
Document Number: 001-49263 Rev. *J
Page 34 of 58
10.3.9 DC Programming Specifications
The following table lists guaranteed maximum and minimum specifications for the voltage and temperature ranges: 4.75V to 5.25V
and -40°C
T
A 85°C. Typical parameters apply to 5V at 25°C and are for design guidance only.
DC I2C Specifications
The following table lists guaranteed maximum and minimum specifications for the voltage and temperature ranges: 4.75V to 5.25V
and -40°C
T
A 85°C. Typical parameters apply to 5V at 25°C and are for design guidance only.
Table 10-11. DC Programming Specifications
Symbol
Description
Min
Typ
Max
Units
Notes
VDDP
VDD for programming and erase
4.5
5
5.5
V
This specification applies
to the functional
requirements of external
programmer tools.
VDDLV
Low VDD for verify
4.7
4.8
4.9
V
This specification applies
to the functional
requirements of external
programmer tools.
VDDHV
High VDD for verify
5.1
5.2
5.3
V
This specification applies
to the functional
requirements of external
programmer tools.
VDDIWRITE
Supply voltage for flash write operation
4.75
5,0
5.25
V
This specification applies
to this device when it is
executing internal flash
writes.
IDDP
Supply Current During Programming or Verify
–
10
30
mA
VILP
Input Low Voltage During Programming or
Verify
–
0.8
V
VIHP
Input High Voltage During Programming or
Verify
2.2
–
V
IILP
Input Current when Applying VILP to P1[0] or
P1[1] During Programming or Verify
–
0.2
mA
Driving internal pull down
resistor
IIHP
Input Current when Applying VIHP to P1[0] or
P1[1] During Programming or Verify
–
1.5
mA
Driving internal pull down
resistor
VOLV
Output Low Voltage During Programming or
Verify
–
Vss +
0.75
V
VOHV
Output High Voltage During Programming or
Verify
Vdd - 1.0
–
Vdd
V
FlashENPB
Flash Endurance (per block)
50,000
–
Erase/write cycles per
block
FlashENT
Flash Endurance (total)[5]
1,800,000
–
Erase/write cycles
FlashDR
Flash Data Retention
10
–
Years
Table 10-12. DC I2C Specifications
Parameter
Description
Min
Typ
Max
Units
Notes
VILI2C
Input low level
–
0.25 × VDD
V4.75 V
V
DD 5.25 V
VIHI2C
Input high level
0.7 × VDD
––
V
4.75 V
V
DD 5.25 V
Note
4. All GPIOs meet the DC GPIO VIL and VIH specifications found in the DC GPIO specifications sections.The I
2C GPIO pins also meet the mentioned specs.
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