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參數(shù)資料
| 型號(hào)： | CD40105BMS |
| 廠商： | Intersil Corporation |
| 英文描述： | CMOS FIFO Register(CMOS 先進(jìn)先出寄存器) |
| 中文描述： | FIFO寄存器的CMOS的CMOS（先進(jìn)先出寄存器） |
| 文件頁(yè)數(shù)： | 6/10頁(yè) |
| 文件大?。?/td> | 116K |
| 代理商： | CD40105BMS |
7-1322
Specifications CD40105BMS
Minimum Master Reset
Pulse Width
TWH
VDD = 5V
1, 2, 3
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
-
200
ns
VDD = 10V
1, 2, 3
-
90
ns
VDD = 15V
1, 2, 3
-
60
ns
Data-In Ready Pulse
Width
TWL
VDD = 5V
1, 2, 3
-
520
ns
VDD = 10V
1, 2, 3
-
200
ns
VDD = 15V
1, 2, 3
-
140
ns
Data-Out Ready Pulse
Width
TWL
VDD = 5V
1, 2, 3
-
440
ns
VDD = 10V
1, 2, 3
-
180
ns
VDD = 15V
1, 2, 3
-
130
ns
Minimum Shift Out Pulse
Width
TWL
VDD = 5V
1, 2, 3
-
180
ns
VDD = 10V
1, 2, 3
-
75
ns
VDD = 15V
1, 2, 3
-
55
ns
Minimum Data Setup
Time
TSU
VDD = 5V
1, 2, 3
-
0
ns
VDD = 10V
1, 2, 3
-
0
ns
VDD = 15V
1, 2, 3
-
0
ns
Minimum Data Hold Time
TH
VDD = 5V
1, 2, 3
-
350
ns
VDD = 10V
1, 2, 3
-
150
ns
VDD = 15V
1, 2, 3
-
120
ns
Minimum Shift In Pulse
Width
TW
VDD = 5V
1, 2, 3
-
200
ns
VDD = 10V
1, 2, 3
-
80
ns
VDD = 15V
1, 2, 3
-
60
ns
Input Capacitance
CIN
Any Input
1, 2
-
7.5
pF
NOTES:
1. All voltages referenced to device GND.
2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized
on initial design release and upon design changes which would affect these characteristics.
3. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
4. CL = 50pF, RL = 1K, Input TR, TF < 20ns.
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
LIMITS
UNITS
MIN
MAX
Supply Current
IDD
VDD = 20V, VIN = VDD or GND
1, 4
-
25
μ
A
N Threshold Voltage
VNTH
VDD = 10V, ISS = -10
μ
A
1, 4
-2.8
-0.2
V
N Threshold Voltage Delta
VTN
VDD = 10V, ISS = -10
μ
A
1, 4
-
±
1
V
P Threshold Voltage
VTP
VSS = 0V, IDD = 10
μ
A
1, 4
0.2
2.8
V
P Threshold Voltage Delta
VTP
VSS = 0V, IDD = 10
μ
A
1, 4
-
±
1
V
Functional
F
VDD = 18V, VIN = VDD or GND
1
VOH >
VDD/2
VOL <
VDD/2
V
VDD = 3V, VIN = VDD or GND
Propagation Delay Time
TPHL
TPLH
VDD = 5V
1, 2, 3, 4
+25
o
C
-
1.35 x
+25
o
C
Limit
ns
NOTES: 1. All voltages referenced to device GND.
2. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
3. See Table 2 for +25
o
C limit.
4. Read and Record
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
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