參數(shù)資料
型號： CD40105BMS
廠商： Intersil Corporation
英文描述： CMOS FIFO Register(CMOS 先進先出寄存器)
中文描述： FIFO寄存器的CMOS的CMOS（先進先出寄存器）
文件頁數(shù)： 5/10頁
文件大?。?/td> 116K
代理商： CD40105BMS
7-1321
Specifications CD40105BMS
Output Current (Sink)
IOL5
VDD = 5V, VOUT = 0.4V
1, 2
+125
o
C
-55
o
C
+125
o
C
-55
o
C
+125
o
C
-55
o
C
+125
o
C
-55
o
C
+125
o
C
-55
o
C
+125
o
C
-55
o
C
+125
o
C
-55
o
C
0.36
-
mA
0.64
-
mA
Output Current (Sink)
IOL10
VDD = 10V, VOUT = 0.5V
1, 2
0.9
-
mA
1.6
-
mA
Output Current (Sink)
IOL15
VDD = 15V, VOUT = 1.5V
1, 2
2.4
-
mA
4.2
-
mA
Output Current (Source)
IOH5A
VDD = 5V, VOUT = 4.6V
1, 2
-
-0.36
mA
-
-0.64
mA
Output Current (Source)
IOH5B
VDD = 5V, VOUT = 2.5V
1, 2
-
-1.15
mA
-
-2.0
mA
Output Current (Source)
IOH10
VDD = 10V, VOUT = 9.5V
1, 2
-
-0.9
mA
-
-1.6
mA
Output Current (Source)
IOH15
VDD =15V, VOUT = 13.5V
1, 2
-
-2.4
mA
-
-4.2
mA
Input Voltage Low
VIL
VDD = 10V, VOH > 9V, VOL < 1V
1, 2
+25
o
C, +125
o
C,
-55
o
C
+25
o
C, +125
o
C,
-55
o
C
+25
o
C
+25
o
C
-
3
V
Input Voltage High
VIH
VDD = 10V, VOH > 9V, VOL < 1V
1, 2
7
-
V
Propagation Delay
Shift or Reset to Data Out
Ready
TPHL1
VDD = 10V
1, 2, 3
-
180
ns
VDD = 15V
1, 2, 3
-
130
ns
Propagation Delay Ripple
through Delay Input to
Output
TPLH3
VDD = 10V
1, 2, 3
+25
o
C
+25
o
C
-
2
μ
s
VDD = 15V
1, 2, 3
-
1.4
μ
s
Propagation Delay
Shift-In to Data-In Ready
TPHL2
VDD = 10V
1, 2, 3
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
-
130
ns
VDD = 15V
1, 2, 3
-
90
ns
Propagation Delay
Shift Out to QN Out
TPHL4
TPLH4
VDD = 5V
1, 2, 3
-
420
ns
VDD = 10V
1, 2, 3
-
380
ns
VDD = 15V
1, 2, 3
-
250
ns
Propagation Delay
3-State Control to Data
Out
TPZH
TPZL
VDD = 10V
1, 2, 4
-
120
ns
VDD = 15V
1, 2, 4
-
80
ns
Propagation Delay
3-State Control to Data
Out
TTHZ
TPLZ
VDD = 10V
1, 2, 3
+25
o
C
+25
o
C
-
100
ns
VDD = 15V
1, 2, 3
-
80
ns
Maximum Shift-In or
Shift-Out Rate
FCL
VDD = 10V
1, 2
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
3
-
MHz
VDD = 15V
1, 2
4
-
MHz
Maximum Shift-In or
Shift-Out Rise Time
TR
VDD = 5V
3
-
15
μ
s
VDD = 10V
3
-
15
μ
s
VDD = 15V
3
-
15
μ
s
Maximum Shift-In Fall
Time
TF
VDD = 5V
3
-
15
μ
s
VDD = 10V
3
-
15
μ
s
VDD = 15V
3
-
15
μ
s
Maximum Shift-Out Fall
Time
TF
VDD = 5V
3
-
15
μ
s
VDD = 10V
3
-
5
μ
s
VDD = 15V
3
-
5
μ
s
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
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