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參數(shù)資料
| 型號： | CB65000 |
| 英文描述： | HCMOS8D 0.18MICRON STANDARD CELLS FAMILY |
| 中文描述： | HCMOS8D 0.18MICRON標準單元家庭 |
| 文件頁數(shù)： | 11/12頁 |
| 文件大?。?/td> | 566K |
| 代理商： | CB65000 |
11/12
CB65000 SERIES
6.2 1.8V I/O specification
Table 7. DC Input Specification (1.55V < vdd < 1.95V)
Table 8. DC OutputSpecification (1.55V < vdd < 1.95V)
Note 1 : X is the source/sink current under worst case conditions and is reflected in the name of the I/O cell according to the drive capability
Table 9. Pullup & Pulldown Characteristics
Note 1 : Min condition: vdd3 = 3V, 125°C, min process.
Max condition : vdd3 = 3.6V, -40°C, fast process
Table 10. IDDQ Current
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Vil
Low level input voltage
0.54
V
Vih
High level input voltage
1.26
V
Vhyst
Schmitt trigger hysteresis
0.4
V
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Note
Vol
Low level output voltage
Iol = XmA
0.11
V
1
Voh
High level output voltage
Ioh = -XmA
1.45
V
1
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Note
Ipu
Pullul current
Vi = 0V
20
35
60
uA
1
Ipd
Pulldown current
Vi = vdd
15
35
70
uA
1
Rup
Equivalent pull-up resistance
Vi = 0V
50
Kohm
Rpd
Equivalent pull-down resistance
Vi = vdd
50
Kohm
OUTPUT
Typ/25C/vdd=1.8V
Fast/25C/vdd=1.95V
Fast/125C/vdd=1.95V
VA
0
1.8
0
1.95
0
1.95
V
bt2crp
I(vdd)
0.5
0.6
2.2
2.2
225
220
nA
bt4crp
I(vdd)
0.6
0.7
2.5
2.3
280
240
nA
bt8crp
I(vdd)
1
1
3
3
390
290
nA
INPUT
VA
0
1.8
0
1.95
0
1.95
V
ibuf
I(vdd)
0.08
0.07
0.4
0.3
40
30
nA
ibuf
I(vdd)
0.2
0.15
1.1
0.6
110
60
nA
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