參數(shù)資料
型號(hào)： BUK7108-40AIE
廠商： NXP Semiconductors N.V.
元件分類： 功率晶體管
英文描述： N-channel TrenchPLUS standard level FET
中文描述： N溝道TrenchPLUS標(biāo)準(zhǔn)電平場(chǎng)效應(yīng)管
封裝： BUK7108-40AIE<SOT426 (D2PAK)|<<http://www.nxp.com/packages/SOT426.html<1<week 1, 2005,;
文件頁(yè)數(shù)： 6/15頁(yè)
文件大?。?/td> 201K
代理商： BUK7108-40AIE
BUK7108-40AIE_3
NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 19 February 2009
6 of 15
NXP Semiconductors
BUK7108-40AIE
N-channel TrenchPLUS standard level FET
6.
Characteristics
Table 6.
Symbol
Static characteristics
V
(BR)DSS
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
drain-source
breakdown voltage
I
D
= 0.25 mA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 0.25 mA; V
GS
= 0 V; T
j
= -55 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C;
see
Figure 9
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 175 °C;
see
Figure 9
I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C;
see
Figure 9
V
DS
= 40 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 40 V; V
GS
= 0 V; T
j
= 175 °C
I
G
= 1 mA; V
DS
= 0 V; T
j
> -55 °C;
T
j
< 175 °C
I
G
= -1 mA; V
DS
= 0 V; T
j
> -55 °C;
T
j
< 175 °C
V
DS
= 0 V; V
GS
= 10 V; T
j
= 25 °C
V
DS
= 0 V; V
GS
= -10 V; T
j
= 25 °C
V
DS
= 0 V; V
GS
= 10 V; T
j
= 175 °C
V
DS
= 0 V; V
GS
= -10 V; T
j
= 175 °C
V
GS
= 10 V; I
D
= 50 A; T
j
= 25 °C;
see
Figure 7
; see
Figure 8
V
GS
= 10 V; I
D
= 50 A; T
j
= 175 °C;
see
Figure 7
; see
Figure 8
V
GS
= 10 V; I
D
= 10 mA; T
j
= 25 °C
V
GS
= 10 V; I
D
= 10 mA; T
j
= 175 °C
V
GS
> 10 V; T
j
> -55 °C; T
j
< 175 °C
40
36
2
-
-
3
-
-
4
V
V
V
V
GS(th)
gate-source threshold
voltage
1
-
-
V
-
-
4.4
V
I
DSS
drain leakage current
-
-
20
0.1
-
22
10
250
-
μA
μA
V
V
(BR)GSS
gate-source breakdown
voltage
20
22
-
V
I
GSS
gate leakage current
-
-
-
-
-
22
22
-
-
6
300
300
10
10
8
nA
nA
μA
μA
m
R
DSon
drain-source on-state
resistance
-
-
15.2
m
R
(D-ISENSE)
on
drain-ISENSE on-state
resistance
1.59
3.02
450
1.87
3.55
500
2.2
4.18
550
I
D
/I
sense
ratio of drain current to
sense current
Dynamic characteristics
Q
G(tot)
total gate charge
Q
GS
gate-source charge
Q
GD
gate-drain charge
C
iss
input capacitance
C
oss
output capacitance
C
rss
reverse transfer
capacitance
t
d(on)
turn-on delay time
t
r
rise time
t
d(off)
turn-off delay time
t
f
fall time
I
D
= 25 A; V
DS
= 32 V; V
GS
= 10 V;
T
j
= 25 °C; see
Figure 14
-
-
-
-
-
-
78
14
34
2670
900
560
84
16
36
3140
1053
653
nC
nC
nC
pF
pF
pF
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz;
T
j
= 25 °C; see
Figure 12
V
DS
= 30 V; R
L
= 1.2
; V
GS
= 10 V;
R
G(ext)
10
; T
j
= 25 °C
-
-
-
-
19
76
121
122
-
-
-
-
ns
ns
ns
ns
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK7108-40AIE /T3 功能描述:MOSFET TRENCHPLUS MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK7108-40AIE,118 功能描述:MOSFET TRENCHPLUS MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK7109-75AIE 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchPLUS standard level FET
BUK7109-75AIE /T3 功能描述:MOSFET TRENCHPLUS MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK7109-75AIE,118 功能描述:MOSFET TRENCHPLUS MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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