參數(shù)資料
型號： BUK7108-40AIE
廠商： NXP Semiconductors N.V.
元件分類： 功率晶體管
英文描述： N-channel TrenchPLUS standard level FET
中文描述： N溝道TrenchPLUS標準電平場效應管
封裝： BUK7108-40AIE<SOT426 (D2PAK)|<<http://www.nxp.com/packages/SOT426.html<1<week 1, 2005,;
文件頁數(shù)： 3/15頁
文件大?。?/td> 201K
代理商： BUK7108-40AIE
BUK7108-40AIE_3
NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 19 February 2009
3 of 15
NXP Semiconductors
BUK7108-40AIE
N-channel TrenchPLUS standard level FET
4.
Limiting values
[1]
Current is limited by power dissipation chip rating.
[2]
Continuous current is limited by package.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Limiting values
Symbol
V
DS
V
DGR
V
GS
I
D
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
R
GS
= 20 k
Min
-
-
-20
-
-
-
-
-
-
-
-55
-55
Max
40
40
20
117
75
75
468
221
10
50
175
175
Unit
V
V
V
A
A
A
A
W
mA
mA
°C
°C
T
mb
= 25 °C; V
GS
= 10 V; see
Figure 2
;
see
Figure 3
;
[1]
[2]
[2]
T
mb
= 100 °C; V
GS
= 10 V; see
Figure 2
;
T
mb
= 25 °C; t
p
≤
10 μs; pulsed; see
Figure 3
T
mb
= 25 °C; see
Figure 1
continuous
pulsed; t
p
= 5 ms;
δ
= 0.01
I
DM
P
tot
I
GS(CL)
peak drain current
total power dissipation
gate-source clamping
current
T
stg
T
j
Source-drain diode
I
S
storage temperature
junction temperature
source current
T
mb
= 25 °C;
[1]
[2]
-
-
-
117
75
468
A
A
A
I
SM
Avalanche ruggedness
E
DS(AL)S
peak source current
t
p
≤
10 μs; pulsed; T
mb
= 25 °C
non-repetitive
drain-source avalanche
energy
I
D
= 75 A; V
sup
≤
40 V; R
GS
= 50
; V
GS
= 10 V;
T
j(init)
= 25 °C; unclamped
-
0.63
J
Electrostatic discharge
V
esd
electrostatic discharge
voltage
HBM; C = 100 pF; R = 1.5 k
-
6
kV
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相關代理商/技術參數(shù)
參數(shù)描述
BUK7108-40AIE /T3 功能描述:MOSFET TRENCHPLUS MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK7108-40AIE,118 功能描述:MOSFET TRENCHPLUS MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK7109-75AIE 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchPLUS standard level FET
BUK7109-75AIE /T3 功能描述:MOSFET TRENCHPLUS MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK7109-75AIE,118 功能描述:MOSFET TRENCHPLUS MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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