參數(shù)資料
型號： BUK652R0-30C
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： N-channel TrenchMOS intermediate level FET
中文描述： 120 A, 30 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： PLASTIC, SC-46, 3 PIN
文件頁數(shù)： 7/15頁
文件大小： 183K
代理商： BUK652R0-30C
BUK652R0-30C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 6 September 2010
7 of 15
NXP Semiconductors
BUK652R0-30C
N-channel TrenchMOS intermediate level FET
Source-drain diode
V
SD
source-drain voltage
I
S
= 25 A; V
GS
= 0 V; T
j
= 25 °C;
see
Figure 15
I
S
= 20 A; dI
S
/dt = -100 A/μs;
V
GS
= -10 V; V
DS
= 25 V
-
0.8
1.2
V
t
rr
Q
r
reverse recovery time
recovered charge
-
-
70
138
-
-
ns
nC
Table 6.
Symbol
Characteristics
…continued
Parameter
Conditions
Min
Typ
Max
Unit
Fig 5.
Forward transconductance as a function of
drain current; typical values
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 7.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
Fig 8.
Output characteristics: drain current as a
function of drain-source voltage; typical values
003aae237
0
50
100
150
200
250
0
25
50
75
100
I
D
(A)
g
fs
(S)
003aae236
0
10
20
30
0
2
4
6
V
GS
(V)
I
D
(A)
T
j
= 175
°
C
T
j
= 25
°
C
003aae240
0
4
8
12
16
0
4
8
12
16
V
GS
(V)
R
DSon
(m
Ω
)
003aae235
0
20
40
60
80
100
0
0.25
0.5
0.75
1
V
DS
(V)
I
D
(A)
V
GS
(V) = 3.8
3.4
3.6
4
4.5
10
3.3
3.2
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK652R0-30C,127 功能描述:MOSFET N-CHAN 30V 120A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK652R1-30C 制造商:NXP Semiconductors 功能描述:MOSFETN CH30V120ASOT78 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,30V,120A,SOT78
BUK652R1-30C,127 功能描述:MOSFET N-CHANNEL TRENCHMOS INTERMEDIATE LVL FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK652R1-30C127 制造商:NXP Semiconductors 功能描述:
BUK652R3-40C 制造商:NXP Semiconductors 功能描述:MOSFETN CH40V120ASOT78 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,40V,120A,SOT78 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,40V,120A,SOT78, Transistor Polarity:N Channel, Continuous Drain Current Id:120A, Drain Source Voltage Vds:40V, On Resistance Rds(on):2mohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs Typ:2.3V, Power Dissipation , RoHS Compliant: Yes
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