參數(shù)資料
型號(hào)： BUK652R0-30C
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： N-channel TrenchMOS intermediate level FET
中文描述： 120 A, 30 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： PLASTIC, SC-46, 3 PIN
文件頁(yè)數(shù)： 6/15頁(yè)
文件大?。?/td> 183K
代理商： BUK652R0-30C
BUK652R0-30C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 6 September 2010
6 of 15
NXP Semiconductors
BUK652R0-30C
N-channel TrenchMOS intermediate level FET
6.
Characteristics
Table 6.
Symbol
Static characteristics
V
(BR)DSS
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
drain-source
breakdown voltage
I
D
= 250 μA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 250 μA; V
GS
= 0 V; T
j
= -55 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C;
see
Figure 9
; see
Figure 10
I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C;
see
Figure 10
I
D
= 2.5 mA; V
DS
= V
GS
; T
j
= 175 °C;
see
Figure 10
V
DS
= 30 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 30 V; V
GS
= 0 V; T
j
= 175 °C
V
DS
= 0 V; V
GS
= 20 V; T
j
= 25 °C
V
DS
= 0 V; V
GS
= -20 V; T
j
= 25 °C
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
see
Figure 16
V
GS
= 4.5 V; I
D
= 25 A; T
j
= 25 °C;
see
Figure 16
V
GS
= 10 V; I
D
= 25 A; T
j
= 175 °C;
see
Figure 11
; see
Figure 16
V
GS
= 5 V; I
D
= 25 A; T
j
= 25 °C;
see
Figure 16
30
27
1.8
-
-
2.3
-
-
2.8
V
V
V
V
GS(th)
gate-source threshold
voltage
-
-
3.3
V
0.8
-
-
V
I
DSS
drain leakage current
-
-
-
-
-
0.02
-
2
2
1.9
1
500
100
100
2.2
μA
μA
nA
nA
m
I
GSS
gate leakage current
R
DSon
drain-source on-state
resistance
-
2.6
3.7
m
-
3.4
4.2
m
-
2.3
3
m
Dynamic characteristics
Q
G(tot)
total gate charge
I
D
= 25 A; V
DS
= 24 V; V
GS
= 5 V;
see
Figure 12
; see
Figure 13
I
D
= 25 A; V
DS
= 24 V; V
GS
= 10 V;
see
Figure 12
; see
Figure 13
-
131
-
nC
-
-
-
-
-
-
229
38
63
11223
1780
1085
-
-
-
14964 pF
2136
1486
nC
nC
nC
Q
GS
Q
GD
C
iss
C
oss
C
rss
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
internal source
inductance
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz;
T
j
= 25 °C; see
Figure 14
pF
pF
t
d(on)
t
r
t
d(off)
t
f
L
D
V
DS
= 25 V; R
L
= 1
; V
GS
= 10 V;
R
G(ext)
= 10
-
-
-
-
-
53
114
363
192
4.5
-
-
-
-
-
ns
ns
ns
ns
nH
from drain lead 6 mm from package to
centre of die ; T
j
= 25 °C
from source lead to source bond pad ;
T
j
= 25 °C
L
S
-
7.5
-
nH
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK652R0-30C,127 功能描述:MOSFET N-CHAN 30V 120A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK652R1-30C 制造商:NXP Semiconductors 功能描述:MOSFETN CH30V120ASOT78 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,30V,120A,SOT78
BUK652R1-30C,127 功能描述:MOSFET N-CHANNEL TRENCHMOS INTERMEDIATE LVL FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK652R1-30C127 制造商:NXP Semiconductors 功能描述:
BUK652R3-40C 制造商:NXP Semiconductors 功能描述:MOSFETN CH40V120ASOT78 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,40V,120A,SOT78 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,40V,120A,SOT78, Transistor Polarity:N Channel, Continuous Drain Current Id:120A, Drain Source Voltage Vds:40V, On Resistance Rds(on):2mohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs Typ:2.3V, Power Dissipation , RoHS Compliant: Yes
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