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參數(shù)資料
| 型號： | BUK652R0-30C |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-channel TrenchMOS intermediate level FET |
| 中文描述： | 120 A, 30 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數(shù)： | 15/15頁 |
| 文件大?。?/td> | 183K |
| 代理商： | BUK652R0-30C |
NXP Semiconductors
BUK652R0-30C
N-channel TrenchMOS intermediate level FET
NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 6 September 2010
Document identifier: BUK652R0-30C
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
11. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
9.1
9.2
9.3
9.4
10
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits. . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
Ordering information. . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .5
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .11
Revision history. . . . . . . . . . . . . . . . . . . . . . . . .12
Legal information. . . . . . . . . . . . . . . . . . . . . . . .13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Contact information. . . . . . . . . . . . . . . . . . . . . .14
相關PDF資料 |
PDF描述 |
|---|---|
| BUK652R1-30C | N-channel TrenchMOS intermediate level FET |
| BUK652R3-40C | N-channel TrenchMOS intermediate level FET |
| BUK652R6-40C | N-channel TrenchMOS FET |
| BUK653R2-55C | N-channel TrenchMOS intermediate level FET |
| BUK653R3-30C | N-channel TrenchMOS intermediate level FET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BUK652R0-30C,127 | 功能描述:MOSFET N-CHAN 30V 120A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK652R1-30C | 制造商:NXP Semiconductors 功能描述:MOSFETN CH30V120ASOT78 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,30V,120A,SOT78 |
| BUK652R1-30C,127 | 功能描述:MOSFET N-CHANNEL TRENCHMOS INTERMEDIATE LVL FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK652R1-30C127 | 制造商:NXP Semiconductors 功能描述: |
| BUK652R3-40C | 制造商:NXP Semiconductors 功能描述:MOSFETN CH40V120ASOT78 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,40V,120A,SOT78 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,40V,120A,SOT78, Transistor Polarity:N Channel, Continuous Drain Current Id:120A, Drain Source Voltage Vds:40V, On Resistance Rds(on):2mohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs Typ:2.3V, Power Dissipation , RoHS Compliant: Yes |
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