參數(shù)資料
型號: BUJD203A
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: NPN power transistor with integrated diode
中文描述: 4 A, 425 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封裝: PLASTIC, SC-46, 3 PIN
文件頁數(shù): 8/14頁
文件大?。?/td> 317K
代理商: BUJD203A
BUJD203A
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 2 December 2010
8 of 14
NXP Semiconductors
BUJD203A
NPN power transistor with integrated diode
Fig 10. Base-emitter saturation voltage as a function of
collector current; typical values
Fig 11. DC current gain as a function of collector
current; typical values
Fig 12. Test circuit for resistive load switching
Fig 13. Switching times waveforms for resistive load
001aab996
V
BEsat
(V)
I
C
(A)
10
1
10
1
0.6
0.8
0.2
0.4
1.0
1.2
1.4
0
001aab994
I
C
(A)
10
2
10
1
10
1
10
10
2
h
FE
1
V
CE
= 5 V
1 V
T
j
= 25
°
C
001aab989
t
p
R
B
V
IM
0
R
L
DUT
V
CC
T
001aab990
I
C
I
B
10 %
10 %
90 %
90 %
t
on
t
off
t
s
t
f
t
t
I
Bon
I
Boff
I
Con
t
r
30 ns
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BUJD203A,127 功能描述:兩極晶體管 - BJT NPN 425 V 4 A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BUJD203AD 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN 4A 850V DPAK 制造商:NXP Semiconductors 功能描述:TRANSISTOR, NPN, 4A, 850V, DPAK 制造商:NXP Semiconductors 功能描述:TRANSISTOR, NPN, 4A, 850V, DPAK; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:425V; Power Dissipation Pd:80W; DC Collector Current:4A; DC Current Gain hFE:21; No. of Pins:3 ;RoHS Compliant: Yes
BUJD203AD,118 功能描述:兩極晶體管 - BJT NPN 425 V 4 A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BUJD203AX 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN 4A 850V TO220F 制造商:NXP Semiconductors 功能描述:TRANSISTOR, NPN, 4A, 850V, TO220F 制造商:NXP Semiconductors 功能描述:TRANSISTOR, NPN, 4A, 850V, TO220F; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:425V; Power Dissipation Pd:26W; DC Collector Current:4A; DC Current Gain hFE:21; No. of Pins:3 ;RoHS Compliant: Yes
BUJD203AX,127 功能描述:兩極晶體管 - BJT NPN 425 V 4 A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2