參數(shù)資料
型號(hào)： BUJD203A
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： NPN power transistor with integrated diode
中文描述： 4 A, 425 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封裝： PLASTIC, SC-46, 3 PIN
文件頁(yè)數(shù)： 6/14頁(yè)
文件大?。?/td> 317K
代理商： BUJD203A
BUJD203A
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 2 December 2010
6 of 14
NXP Semiconductors
BUJD203A
NPN power transistor with integrated diode
6.
Characteristics
Table 6.
Symbol
Static characteristics
I
CES
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
collector-emitter cut-off
current
V
BE
= 0 V; V
CE
= 850 V; T
j
= 125 °C
V
BE
= 0 V; V
CE
= 850 V; T
j
= 25 °C
V
CB
= 850 V; I
E
= 0 A
[1]
-
-
-
-
-
-
2
1
1
mA
mA
mA
[1]
I
CBO
collector-base cut-off
current
collector-emitter cut-off
current
emitter-base cut-off
current
collector-emitter
sustaining voltage
collector-emitter
saturation voltage
base-emitter saturation
voltage
forward voltage
DC current gain
[1]
I
CEO
V
CE
= 425 V; I
B
= 0 A
[1]
-
-
0.1
mA
I
EBO
V
EB
= 7 V; I
C
= 0 A
-
-
10
mA
V
CEOsus
I
B
= 0 A; I
C
= 10 mA; L
C
= 25 mH;
see
Figure 6
; see
Figure 7
I
C
= 3 A; I
B
= 0.6 A; see
Figure 8
;
see
Figure 9
I
C
= 3 A; I
B
= 0.6 A; see
Figure 10
400
450
-
V
V
CEsat
-
0.29
1
V
V
BEsat
-
0.99
1.5
V
V
F
h
FE
I
F
= 2 A; T
j
= 25 °C
I
C
= 1 mA; V
CE
= 5 V; T
mb
= 25 °C;
see
Figure 11
I
C
= 500 mA; V
CE
= 5 V; T
j
= 25 °C;
see
Figure 11
I
C
= 2 A; V
CE
= 5 V; T
mb
= 25 °C;
see
Figure 11
I
C
= 3 A; V
CE
= 5 V; T
mb
= 25 °C;
see
Figure 11
-
10
1.04
15
1.5
32
V
13
21
32
11
16
22
-
12.5
-
Dynamic characteristics
t
on
turn-on time
I
C
= 2.5 A; I
Bon
= 0.5 A; I
Boff
= -0.5 A;
R
L
= 75
; T
j
= 25 °C; resistive load;
see
Figure 12
; see
Figure 13
I
C
= 2.5 A; I
Bon
= 0.5 A; I
Boff
= -0.5 A;
R
L
= 75
; T
j
= 25 °C; resistive load;
see
Figure 12
; see
Figure 13
I
C
= 2 A; I
Bon
= 0.4 A; V
BB
= -5 V;
L
B
= 1 μH; T
j
= 25 °C; inductive load;
see
Figure 14
; see
Figure 15
I
C
= 2 A; I
Bon
= 0.4 A; V
BB
= -5 V;
L
B
= 1 μH; T
j
= 100 °C; inductive load;
see
Figure 14
; see
Figure 15
-
0.52
0.6
μs
t
s
storage time
-
2.7
3.3
μs
-
1.2
1.4
μs
-
-
1.8
μs
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BUJD203A,127 功能描述:兩極晶體管 - BJT NPN 425 V 4 A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BUJD203AD 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN 4A 850V DPAK 制造商:NXP Semiconductors 功能描述:TRANSISTOR, NPN, 4A, 850V, DPAK 制造商:NXP Semiconductors 功能描述:TRANSISTOR, NPN, 4A, 850V, DPAK; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:425V; Power Dissipation Pd:80W; DC Collector Current:4A; DC Current Gain hFE:21; No. of Pins:3 ;RoHS Compliant: Yes
BUJD203AD,118 功能描述:兩極晶體管 - BJT NPN 425 V 4 A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BUJD203AX 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN 4A 850V TO220F 制造商:NXP Semiconductors 功能描述:TRANSISTOR, NPN, 4A, 850V, TO220F 制造商:NXP Semiconductors 功能描述:TRANSISTOR, NPN, 4A, 850V, TO220F; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:425V; Power Dissipation Pd:26W; DC Collector Current:4A; DC Current Gain hFE:21; No. of Pins:3 ;RoHS Compliant: Yes
BUJD203AX,127 功能描述:兩極晶體管 - BJT NPN 425 V 4 A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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