參數(shù)資料
型號(hào): BUJ103AD
廠商: NXP Semiconductors N.V.
元件分類: 功率晶體管
英文描述: NPN power transistor
封裝: BUJ103AD<SOT428 (DPAK)|<<http://www.nxp.com/packages/SOT428.html<1<week 1, 2005,;
文件頁數(shù): 10/13頁
文件大?。?/td> 148K
代理商: BUJ103AD
BUJ103AD
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 8 November 2011
10 of 13
NXP Semiconductors
BUJ103AD
Silicon diffused power transistor
10. Revision history
Table 6.
Document ID
BUJ103AD v.2
Modifications:
Revision history
Release date
20111108
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
20041214
Product data sheet
Data sheet status
Product data sheet
Change notice
-
Supersedes
BUJ103AD v.1
BUJ103AD v.1
-
-
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參數(shù)描述
BUJ103AD,118 功能描述:兩極晶體管 - BJT Trans GP BJT NPN 400V 4A 3-Pin(2+Tab) RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BUJ103AU 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor
BUJ103AX 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor
BUJ103AX,127 功能描述:兩極晶體管 - BJT SILICON DIFFUSED POWER TRANSISTOR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BUJ105A 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor