參數(shù)資料
型號: BS616UV1010DCG10
廠商: BRILLIANCE SEMICONDUCTOR, INC.
英文描述: Ultra Low Power CMOS SRAM 64K X 16 bit
中文描述: 超低功耗CMOS SRAM 64K的× 16位
文件頁數(shù): 9/11頁
文件大?。?/td> 218K
代理商: BS616UV1010DCG10
BS616UV1010
R0201-BS616UV1010
Revision
May.
2.6
2006
9
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ORDERING INFORMATION
Note:
BSI (Brilliance Semiconductor Inc.) assumes no responsibility for the application or use of any product or circuit described herein. BSI does
not authorize its products for use as critical components in any application in which the failure of the BSI product may be expected to result
in significant injury or death, including life-support systems and critical medical instruments.
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PACKAGE DIMENSIONS
n
PACKAGE
D: DICE
A: BGA-48-0608
E: TSOP II-44
GRADE
C: +0
C ~ +70
o
C
I: -40
C ~ +85
C
SPEED
10: 100ns
PKG MATERIAL
-: Normal
G: Green, RoHS Compliant
P: Pb free, RoHS Compliant
TSOP II-44
相關(guān)PDF資料
PDF描述
BS616UV1010DCP10 Ultra Low Power CMOS SRAM 64K X 16 bit
BS616UV1010DI10 Ultra Low Power CMOS SRAM 64K X 16 bit
BS616UV1010DIG10 Ultra Low Power CMOS SRAM 64K X 16 bit
BS616UV1010DIP10 Ultra Low Power CMOS SRAM 64K X 16 bit
BS616UV1010EC10 Ultra Low Power CMOS SRAM 64K X 16 bit
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