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| 型號(hào)： | BS616UV1010DCG10 |
| 廠商： | BRILLIANCE SEMICONDUCTOR, INC. |
| 英文描述： | Ultra Low Power CMOS SRAM 64K X 16 bit |
| 中文描述： | 超低功耗CMOS SRAM 64K的× 16位 |
| 文件頁(yè)數(shù)： | 3/11頁(yè) |
| 文件大?。?/td> | 218K |
| 代理商： | BS616UV1010DCG10 |
BS616UV1010
R0201-BS616UV1010
Revision
May.
2.6
2006
3
n
ABSOLUTE MAXIMUM RATINGS
(1)
SYMBOL
PARAMETER
RATING
UNITS
V
TERM
Terminal Voltage with
Respect to GND
Temperature Under
Bias
-0.5
(2)
to 5.0
V
T
BIAS
-40 to +125
O
C
T
STG
Storage Temperature
-60 to +150
O
C
P
T
Power Dissipation
1.0
W
I
OUT
DC Output Current
20
mA
1. Stresses greater than those listed under ABSOLUTE
MAXIMUM RATINGS may cause permanent damage to the
device. This is a stress rating only and functional operation of
the device at these or any other conditions above those
indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
2.
–
2.0V in case of AC pulse width less than 30 ns.
n
OPERATING RANGE
RANG
AMBIENT
TEMPERATURE
V
CC
Commercial
0
O
C to + 70
O
C
1.9V ~ 3.6V
Industrial
-40
O
C to + 85
O
C
1.9V ~ 3.6V
n
CAPACITANCE
(1)
(T
A
= 25
O
C, f = 1.0MHz)
SYMBOL PAMAMETER CONDITIONS MAX. UNITS
C
IN
Input
Capacitance
Input/Output
Capacitance
V
IN
= 0V
6
pF
C
IO
V
I/O
= 0V
8
pF
1. This parameter is guaranteed and not 100% tested.
n
DC ELECTRICAL CHARACTERISTICS (T
A
= -40
O
C to +85
O
C)
PARAMETER
NAME
PARAMETER
TEST CONDITIONS
MIN.
TYP.
(1)
MAX.
UNITS
V
CC
Power Supply
1.9
--
3.6
V
V
CC
=2.0V
0.6
V
IL
Input Low Voltage
V
CC
=3.0V
-0.3
(2)
--
0.8
V
V
CC
=2.0V
1.4
V
IH
Input High Voltage
V
CC
=3.0V
2.2
--
V
CC
+0.3
(3)
V
I
IL
Input Leakage Current
V
IN
= 0V to V
CC
--
--
1
uA
I
LO
Output Leakage Current
V
I/O
= 0V to V
CC
,
CE= V
IH
or OE = V
IH
--
--
1
uA
V
CC
= Max, I
OL
= 0.1mA
V
CC
=2.0V
0.2
V
OL
Output Low Voltage
V
CC
= Max, I
OL
= 2.0mA
V
CC
=3.0V
--
--
0.4
V
V
CC
= Min, I
OH
= -0.1mA
V
CC
=2.0V
1.6
V
OH
Output High Voltage
V
CC
= Min, I
OH
= -1.0mA
CE = V
IL
,
I
IO
= 0mA, f = F
MAX
V
CC
=3.0V
2.4
--
--
V
V
CC
=2.0V
15
I
CC
Operating Power Supply
Current
(4)
V
CC
=3.0V
--
--
20
mA
V
CC
=2.0V
1.0
I
CC1
Operating Power Supply
Current
CE = V
IL
,
I
IO
= 0mA, f = 1MHz
V
CC
=3.0V
--
--
2.0
mA
V
CC
=2.0V
0.5
I
CCSB
Standby Current
–
TTL
CE = V
IH
,
I
IO
= 0mA
V
CC
=3.0V
--
--
1.0
mA
V
CC
=2.0V
0.01
1.0
I
CCSB1
(5)
Standby Current
–
CMOS
CE
≧
V
CC
-0.2V
V
IN
≧
V
CC
-0.2V or V
IN
≦
0.2V
V
CC
=3.0V
--
0.02
1.5
uA
1. Typical characteristics are at T
=25
O
C and not 100% tested.
2. Undershoot: -1.0V in case of pulse width less than 20 ns.
3. Overshoot: V
CC
+1.0V in case of pulse width less than 20 ns.
4. F
MAX
=1/t
5. I
CC (MAX.)
is 13mA/18mA at V
=2.0V/3.0V and T
=70
O
C.
6. I
CCSB1(MAX.)
is 0.5uA/1.0uA at V
CC
=2.0V/3.0V and T
A
=70
O
C.
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