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參數(shù)資料
| 型號： | BS616UV1010DCG10 |
| 廠商： | BRILLIANCE SEMICONDUCTOR, INC. |
| 英文描述： | Ultra Low Power CMOS SRAM 64K X 16 bit |
| 中文描述： | 超低功耗CMOS SRAM 64K的× 16位 |
| 文件頁數(shù)： | 6/11頁 |
| 文件大小： | 218K |
| 代理商： | BS616UV1010DCG10 |
BS616UV1010
R0201-BS616UV1010
Revision
May.
2.6
2006
6
READ CYCLE 2
(1,3,4)
READ CYCLE 3
(1, 4)
NOTES:
1. WE is high in read Cycle.
2. Device is continuously selected when CE = V
IL
.
3. Address valid prior to or coincident with CE transition low.
4. OE = V
IL
.
5. Transition is measured
±
500mV from steady state with C
L
= 5pF.
The parameter is guaranteed but not 100% tested.
t
OH
t
RC
t
OE
t
BE
t
BDO
D
OUT
CE
OE
ADDRESS
t
CLZ
(5)
t
CHZ
t
O(1,5)
(5)
t
OLZ
t
AA
LB, UB
t
BA
t
CLZ
(5)
t
CHZ
(5)
D
OUT
LB, UB
CE
t
BA
t
ACS
t
BE
t
BDO
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