參數(shù)資料
型號: AM29BDS323D
廠商: Advanced Micro Devices, Inc.
英文描述: 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
中文描述: 32兆位(2米× 16位)的CMOS 1.8伏,只有同時讀/寫,突發(fā)模式閃存
文件頁數(shù): 7/44頁
文件大小: 746K
代理商: AM29BDS323D
Am29BDS323D
7
P R E L I M I N A R Y
INPUT/OUTPUT DESCRIPTIONS
A16
A20
=
Address Inputs
A/DQ0
A/DQ15
=
Multiplexed Address/Data input/output
CE#
=
Chip Enable Input. Asynchronous
relative to CLK for the Burst mode.
OE#
=
Output Enable Input. Asynchronous
relative to CLK for the Burst mode.
WE#
=
Write Enable Input.
V
CC
V
SS
NC
=
Device Power Supply (1.7 V
1.9 V).
=
Ground
=
No Connect; not connected internally
RDY
=
Ready output; indicates the status of
the Burst read. Low = data not valid at
expected time. High = data valid.
CLK
=
The first rising edge of CLK in
conjunction with AVD# low latches
address input and activates burst
mode operation. After the initial word
is output, subsequent rising edges of
CLK increment the internal address
counter. CLK should remain low
during asynchronous access.
AVD#
=
Address Valid input. Indicates to
device that the valid address is
present on the address inputs
(address bits A0
A15 are multiplexed,
address bits A16
A20 are address
only).
Low = for asynchronous mode,
indicates valid address; for burst
mode, causes starting address to be
latched on rising edge of CLK.
High = device ignores address inputs
PS
=
Power Saving input/output
During a read operation, PS indicates
whether or not the data on the outputs
are inverted. Low = data not inverted;
High = data inverted
RESET#
=
Hardware reset input. Low = device
resets and returns to reading array
data. RESET# must be low during
device power up.
WP#
=
Hardware write protect input. Low =
disables writes to SA70 and SA71
V
PP
=
At 12 V, accelerates programming;
automatically places device in unlock
bypass mode. At V
IL
, disables
program and erase functions. Should
be at V
IH
for all other conditions.
LOGIC SYMBOL
5
16
A/DQ0
A/DQ15
A16
A20
CE#
OE#
WE#
RESET#
CLK
RDY
PS
AVD#
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