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參數(shù)資料
| 型號(hào)： | AM29BDS323D |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| 中文描述： | 32兆位（2米× 16位）的CMOS 1.8伏，只有同時(shí)讀/寫，突發(fā)模式閃存 |
| 文件頁(yè)數(shù)： | 31/44頁(yè) |
| 文件大?。?/td> | 746K |
| 代理商： | AM29BDS323D |
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Am29BDS323D
31
P R E L I M I N A R Y
AC CHARACTERISTICS
Erase/Program Operations
Notes:
1. Not 100% tested.
2. See the
“
Erase and Programming Performance
”
section for more information.
3. Does not include the preprogramming time.
Parameter
Description
11A
Unit
JEDEC
Standard
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
100
ns
t
AVWL
t
AS
Address Setup Time
Min
5
ns
t
WLAX
t
AH
Address Hold Time
Min
7
ns
t
AVDP
AVD# Low Time
Min
12
ns
t
DVWH
t
DS
Data Setup Time
Min
50
ns
t
WHDX
t
DH
Data Hold Time
Min
0
ns
t
GHWL
t
GHWL
Read Recovery Time Before Write
Typ
0
ns
t
ELWL
t
CS
CE# Setup Time
Typ
0
ns
t
WHEH
t
CH
CE# Hold Time
Typ
0
ns
t
WLWH
t
WP
/t
WRL
Write Pulse Width
Typ
60
ns
t
WHWL
t
WPH
Write Pulse Width High
Typ
30
ns
t
SR/W
Latency Between Read and Write Operations
Min
0
ns
t
WHWH1
t
WHWH1
Programming Operation (Note 2)
Typ
11.5
μs
t
WHWH1
t
WHWH1
Accelerated Programming Operation (Note 2)
Typ
4
μs
t
WHWH2
t
WHWH2
Sector Erase Operation (Notes 2, 3)
Typ
1.5
sec
t
VPP
V
PP
Rise and Fall Time
Min
500
ns
t
VPS
V
PP
Setup Time (During Accelerated Programming)
Min
1
μs
t
VCS
V
CC
Setup Time
Min
50
μs
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