參數(shù)資料
型號: AK2572
廠商: Asahi Kasei Microsystems Co.,Ltd
英文描述: APC for Burst Mode Applicable Direct Modulation Laser Diode
中文描述: apc的突發(fā)模式適用的直接調(diào)制激光器
文件頁數(shù): 6/50頁
文件大小: 463K
代理商: AK2572
ASAHI KASEI
[AK2572]
-6-
<MS0290-E-01>
2004/8
Ⅱ.
ABSOLUTE MAXIMUM RATINGS
Symbol
Min.
VDD
- 0.3
VSS
0.0
VIN
VSS
0.3
VDD
0.3
IIN
- 10
Tstg
- 55
Item
Max.
6.0
0.0
Unit
V
V
V
mA
Note
Power Supply Voltage
Ground Level
Input Voltage
Input Current
Storage Temperature
AVDD, DVDD, VDDMD, VDDBI
AVSS, DVSS, VSSBI (Base Voltage)
Excluding VDD-pins
Excluding VDD-pins
10
130
Ⅲ.
RECOMMENDED OPERATING CONDITIONS
Symbol
Min.
Operating Ambient Temperature
Ta
VDD
Power Supply Voltage
VSS
< Important Notice > Please pay attention not to keep the condition of VDD
On Reset function of AK2572 cannot operate correctly, AK2572 supplies the abnormal LD current and the
possibility of damaging LD increases.
Item
Typ.
3.3
0.0
Max.
+ 85
3.5
0.0
1.5V which makes that the Power
Unit
V
V
Note
- 40
3.0
0.0
3.3V (-9% / +6%)
Base Voltage
Ⅳ.
ELECTRICAL CHARACTERISTICS
(1) Current Consumption
Item
Symbol
IDD
Min.
Typ.
21
Max.
26
Unit
mA
Note
[*1], [*2]
Current Consumption (All VDD-pins)
[*1] It doesn’t include the output current of I-DACs.
[*2] R_DACx
FFh (x
1~3), R_DAC1,2_GAIN
1, R_DAC3_GAIN
0, PDGAIN
0dB, PDIN
1V
(2) EEPROM Characteristics
Item
Min.
1000
10
Max.
Unit
times
year
Condition
[*]
EEPROM Write Cycle
EEPROM Data Retention Time
[*] This parameter is characterized and is not 100% tested.
< Important Notice > The adjusted data in AKM factory are stored in advance at address location (Device
Address
A6h, Address
60h) for the offset voltage of the On-chip temperature sensor. If such excessive
temperature stress is to be applied to the AK2572 which exceeds a guaranteed EEPROM data retention
conditions (for 10 years at 85
), it is important to read the pre-determined data in advance and to re-write the
same data back into EEPROM after an exposure to the excessive temperature environment. Even if the
exposure time is shorter than the retention time, any accelerated temperature stress tests (such as baking) are
performed, it is recommended to read the pre-set data first and to re-write it after the test. Access to unused
address locations is not functionally guaranteed. Please refer to Section 9.4, “EEPROM Configuration”.
J unction temperature Tj
85
(3) Digital Input / Output Pin DC Characteristics
Item
High Level Input Voltage
Low Level Input Voltage
High Level Output Voltage
Symbol
VIH
VIL
VOH
Min.
2.0
0.9VDD
Max.
0.8
Unit
V
V
V
Condition
IOH
- 0.2mA
Low Level Output Voltage
VOL
0.4
V
IOL
1mA (SDA-pin, TXFAULT-pin)
IOL
0.2mA (Excluding SDA, TXFAULT)
Excluding WP-pin
WP-pin
Input Leakage Current
Input Leakage Current 2
IL1
IL2
10
350
μ
A
μ
A
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