參數(shù)資料
型號: AK2572
廠商: Asahi Kasei Microsystems Co.,Ltd
英文描述: APC for Burst Mode Applicable Direct Modulation Laser Diode
中文描述: apc的突發(fā)模式適用的直接調(diào)制激光器
文件頁數(shù): 35/50頁
文件大?。?/td> 463K
代理商: AK2572
ASAHI KASEI
[AK2572]
-35-
< MS0290-E-01>
2004/8
9.2
Write Protect Operation
Accessible range and Device address via Digital I/F are determined by Write Protect setting as shown in Table
9-1.
Table 9-1 Write Protect Operation
Item
WP = “H”
R_WP_CTRL
0
Device address
1010 xxx
ACK
When corresponding Device address is input via Digital I/F [*1]
Access to
EEPROM / Register
WP = “L”
x
1010 000
1
1010 000
Full Access [*2]
A0h only
Read only
Self-Operation
Mode only
A0h only
Read only
Self-Operation
Mode only
Operation mode
Transition to any operation mode is possible
Page Write
Sequential write operation of EEPROM is possible in
every 16 bytes. Sequential write operation of Register
(Address after A8h/3Eh is folded back to A8h/00h).
Sequential read operation of both EEPROM and
Register is possible within the designated address
area respectively. Address after A6h/FFh is folded
back to A0h/00h in EEPROM and address after
A8h/3Fh is folded back to A8h/00h in Register.
“Non-actual space“ address is not skipped.
Sequential Read
Sequential read is possible in
accessible EEPROM area.
*1
ACK signal is not returned during the writing operation into EEPROM.
*2
When Write Protect is released (WP-pin
“H” and R_WP_CTRL
”0”), writing into R_PWR_SEL[1:0] at
address = A8h / 2Fh is possible in Self-Operation Mode.
About Write Protect Setting
* The data for fully accessible setting (E_WP_CTRL
”0”, E_PASSWD
”0”) is programmed at AKM.
(a) Write Protect operation is “ON” when WP-pin at “L”.
WP-pin setting has a higher priority than R_WP_CTRL (Register for Write Protect setting).
(b) Write Protect operation is controlled to be “ON ” or “OFF” by R_WP_CTRL when WP-pin is at “H”.
Access to R_WP_CTRL is possible only when R_PASSWD [7:0] (Register for Write Protect password), which
is loaded via digital I/F, agrees with E_PASSWD [7:0] that is the password retained in advance.
Be noted that other than “00h” should be written into E_PASSWD [7:0] to enable Write Protect.
- R_WP_CTRL
”0”
Full access is possible
- R_WP_CTRL
”1”
Only the area in Device address
’1010 000
A0h
‘ is accessible (Read Only),
especially only Write Protect control register (R_PASSWD, R_WP_CTRL) are writable
Accordingly, when Self-Operation Mode is set by R_WP_CTRL
“1”, access to the adjusting data is executed
as the following procedure,
(1) Make it enable to access to R_WP_CTRL by setting the same value to R_PASSWD as is retained in
E_PASSWD in advance.
(2) Set R_WP_CTRL
“0” to enable full access.
(3) When to modify EEPROM content, shift the mode into EEPROM Access Mode and then modify data.
At the Power-on or when Self-Operation Mode is set, R_PASSWD is reset to “00h” and E_WP_CTRL value
is loaded to R_WP_CTRL. So, if E_WP_CTRL is set to “0”, Write Protect operation is automatically released
at Power-on or when Self-Operation Mode is set.
Table 9-2
Write Protect Control Register / EEPROM
Register
EEPROM
A0h / 7Eh
A6h / 7Eh
A0h / 7Fh
A6h / 7Fh
D7
D6
D5
D4
D3
D2
D1
D0
WP_CTRL
PASSWD
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