參數(shù)資料
型號(hào): ADT7476AARQZ-R
廠商: ON Semiconductor
文件頁數(shù): 16/66頁
文件大?。?/td> 945K
描述: IC REMOTE THERMAL CTLR 24QSOP
產(chǎn)品變化通告: MFG CHG Notification ADI to ON Semi
QSOP 24ld Pkg (MSL) Change 17/Jun/2010
標(biāo)準(zhǔn)包裝: 2,500
系列: dBCool®
功能: 風(fēng)扇控制,溫度監(jiān)控器
傳感器類型: 內(nèi)部和外部
感應(yīng)溫度: -40°C ~ 125°C
精確度: ±2.5%
拓?fù)洌?/td> ADC,比較器,風(fēng)扇速度計(jì)數(shù)器,多路復(fù)用器,寄存器庫
輸出類型: SMBus?
輸出警報(bào):
輸出風(fēng)扇:
電源電壓: 3 V ~ 3.6 V
工作溫度: -40°C ~ 125°C
安裝類型: 表面貼裝
封裝/外殼: 24-SSOP(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: 24-QSOP
包裝: 帶卷 (TR)
其它名稱: ADT7476AARQZ-R-ND
ADT7476AARQZ-ROSTR
ADT7476A
http://onsemi.com
16
Table 14. TWOS COMPLEMENT TEMPERATURE DATA
FORMAT
Temperature
Digital Output (10-bit) (Note 1)
128癈
1000 0000 00 (Diode Fault)
50癈
1100 1110 00
25癈
1110 0111 00
10癈
1111 0110 00
0癈
0000 0000 00
+10.25癈
0000 1010 01
+25.5癈
0001 1001 10
+50.75癈
0011 0010 11
+75癈
0100 1011 00
+100癈
0110 0100 00
+125癈
0111 1101 00
+127癈
0111 1111 00
1.  Bold numbers denote 2 LSB of measurement in the Extended
Resolution Register 2 (0x77) with 0.25癈 resolution.
Table 15. EXTENDED RANGE, TEMPERATURE DATA
FORMAT
Temperature
Digital Output (10-bit) (Note 1)
64癈
0000 0000 00 (Diode Fault)
1癈
0011 1111 00
0癈
0100 0000 00
1癈
0100 0001 00
10癈
0100 1010 00
25癈
0101 1001 00
50癈
0111 0010 00
75癈
1000 1001 00
100癈
1010 0100 00
125癈
1011 1101 00
191癈
1111 1111 00
1.  Bold numbers denote 2 LSB of measurement in the Extended
Resolution Register 2 (0x77) with 0.25癈 resolution.
Remote Temperature Measurement
The ADT7476A can measure the temperature of two
remote diode sensors or diode-connected transistors
connected to Pin 17 and Pin 18, or Pin 15 and Pin 16.
The forward voltage of a diode or diode-connected
transistor operated at a constant current exhibits a negative
temperature coefficient of about 2 mV/癈. Unfortunately,
the absolute value of V
BE
 varies from device to device, and
individual calibration is required to null this out. As a result,
this technique is unsuitable for mass production. The
technique used in the ADT7476A is to measure the change
in V
BE
 when the device is operated at two different currents.
This is given by:
(eq. 1)
DV
BE
+
kT
q
  In
(
N
)
where:
k is the Boltzmanns constant.
q is the charge on the carrier.
T is the absolute temperature in Kelvin.
N is the ratio of the two currents.
Figure 25 shows the input signal conditioning used to
measure the output of a remote temperature sensor. This
figure shows the external sensor as a substrate transistor,
which is provided on some microprocessors for temperature
monitoring. It could also be a discrete transistor such as a
2N3904/2N3906.
If a discrete transistor is used, the collector is not grounded
and is linked to the base. If a PNP transistor is used, the base
is connected to the D input and the emitter to the D+ input.
If an NPN transistor is used, the emitter is connected to the
D input and the base to the D+ input. Figure 26 and
Figure 27 show how to connect the ADT7476A to an NPN
or PNP transistor for temperature measurement. To prevent
ground noise from interfering with the measurement, the
more negative terminal of the sensor is not referenced to
ground, but is biased above ground by an internal diode at
the D input.
Figure 25. Signal Conditioning for Remote Diode Temperature Sensors
LOW-PASS FILTER
f
C
 = 65 kHz
REMOTE
SENSING
TRANSISTOR
BIAS
DIODE
D+
D
V
DD
I
BIAS
I
N ?I
V
OUT+
V
OUT
To ADC
THERMDA
THERMDC
CPU
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