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參數(shù)資料
| 型號： | ADN2860ACPZ25-RL7 |
| 廠商： | Analog Devices Inc |
| 文件頁數(shù)： | 3/20頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC POT DGTL 3CH 25K 24-LFCSP |
| 標(biāo)準包裝： | 1 |
| 接片： | 128，512，512 |
| 電阻（歐姆）： | 25k |
| 電路數(shù)： | 3 |
| 溫度系數(shù)： | 標(biāo)準值 35 ppm/°C |
| 存儲器類型： | 非易失 |
| 接口： | I²C（設(shè)備位址） |
| 電源電壓： | 2.7 V ~ 5.5 V，±2.25 V ~ 2.75 V |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 24-VFQFN 裸露焊盤，CSP |
| 供應(yīng)商設(shè)備封裝： | 24-LFCSP-VQ（4x4） |
| 包裝： | 剪切帶 (CT) |
| 其它名稱： | ADN2860ACPZ25RLCT |
ADN2860
Rev. B | Page 11 of 20
EEPROM INTERFACE
MEMORY ADDRESS
MEMORY DATA
SA
A
00
0
1
E
0
01
1
P
03615-019
0 WRITE
(N BYTES + ACKNOWLEDGE)
EEPROM SLAVE ADDRESS
A/A
Figure 19. EEPROM Write
MEMORY DATA
SA
A
00
0
1
E
0
01
1
P
03615-020
1 READ
(N BYTES + ACKNOWLEDGE)
EEPROM SLAVE ADDRESS
A
Figure 20. EEPROM Current Read
SLAVE ADDRESS
MEMORY ADDRESS
S
0 WRITE
AA
P
03615-021
W
SLAVE ADDRESS
MEMORY DATA
SR
1 READ
REPEATED START
A
(N BYTES + ACKNOWLEDGE)
A/A
Figure 21. EEPROM Random Read
The 256 bytes of EEPROM memory provided in the ADN2860
are organized into 16 pages of 16 bytes each. The word size of
each memory location is one byte wide.
The I2C slave address of the EEPROM is 10100(A1E)(A0E),
where A1E and A0E are external pin-programmable address
bits. The 2-pin programmable address bits allow a total of four
ADN2860 devices to be controlled by a single I2C master bus,
each having its own EEPROM.
An internal 8-bit address counter for the EEPROM is automatically
incremented following each read or write operation. For read
operations, the address counter is incremented after each byte is
read, and the counter rolls over from Address 255 to 0.
For write operations, the address counter is incremented after
each byte is written. The counter rolls over from the highest
address of the current page to the lowest address of the current
page. For example, writing two bytes beginning at Address 31
causes the counter to roll back to Address 16 after the first byte
is written; then the address increments to 17 after the second
byte is written.
EEPROM Write
Each write operation issued to the EEPROM programs between
1 byte and 16 bytes (one page) of memory. Figure 19 shows the
EEPROM write interface. The number of bytes of data, N, that
the user wants to send to the EEPROM is unrestricted. If more
than 16 bytes of data are sent in a single write operation, the
address counter rolls back to the beginning address, and the
previously sent data is overwritten.
EEPROM Write-Acknowledge Polling
After each write operation, an internal EEPROM write cycle
begins. During the EEPROM internal write cycle, the I2C
interface of the device is disabled. It is necessary to determine if
the internal write cycle is complete and whether the I2C
interface is enabled. To do so, execute I2C interface polling by
sending a start condition, followed by the EEPROM slave
address plus the desired R/W bit. If the ADN2860 I
2C interface
responds with an ACK, the write cycle is complete and the
interface is ready to proceed with further operations.
Otherwise, the I2C interface must be polled again to determine
whether the write cycle has been completed.
EEPROM Read
The ADN2860 EEPROM provides two different read
bytes, N, read from the EEPROM in a single operation is
unrestricted. If more than 256 bytes are read, the address
counter rolls back to the start address, and data previously read
is read again.
Figure 20 shows the EEPROM current read operation. This
operation does not allow an address location to be specified,
and reads data beginning at the current address location stored
in the internal address counter.
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