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參數(shù)資料
| 型號： | ADN2860ACPZ25-RL7 |
| 廠商： | Analog Devices Inc |
| 文件頁數(shù)： | 17/20頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC POT DGTL 3CH 25K 24-LFCSP |
| 標(biāo)準(zhǔn)包裝： | 1 |
| 接片： | 128，512，512 |
| 電阻（歐姆）： | 25k |
| 電路數(shù)： | 3 |
| 溫度系數(shù)： | 標(biāo)準(zhǔn)值 35 ppm/°C |
| 存儲器類型： | 非易失 |
| 接口： | I²C（設(shè)備位址） |
| 電源電壓： | 2.7 V ~ 5.5 V，±2.25 V ~ 2.75 V |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 24-VFQFN 裸露焊盤，CSP |
| 供應(yīng)商設(shè)備封裝： | 24-LFCSP-VQ（4x4） |
| 包裝： | 剪切帶 (CT) |
| 其它名稱： | ADN2860ACPZ25RLCT |
ADN2860
Rev. B | Page 6 of 20
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 3.
Parameter
Rating
VDD to GND
0.3 V, +7 V
VSS to GND
+0.3 V, 7 V
VDD to VSS
7 V
VA, VB, VW to GND
VSS 0.3 V, VDD + 0.3 V
IA, IB, IW
Intermittent1
±20 mA
Continuous
±2 mA
Digital Inputs and Output Voltage to GND
0.3 V, VDD + 0.3 V
Operating Temperature Range2
40°C to +85°C
Maximum Junction Temperature (TJ max)
150°C
Storage Temperature
65°C to +150°C
Lead Temperature, Soldering
Vapor Phase (60 sec)
215°C
Infrared (15 sec)
220°C
Thermal Resistance Junction-to-Ambient
θJA
LFCSP-24
32°C/W
1 Includes programming of nonvolatile memory.
2 Maximum terminal current is bounded by the maximum current handling of
the switches, maximum power dissipation of the package, and maximum
applied voltage across any two of the A, B, and W terminals at a given
resistance.
Stresses greater than those listed under Absolute Maximum
Ratings may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
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