參數(shù)資料
型號(hào)： 908E621_07
廠商： 飛思卡爾半導(dǎo)體(中國(guó))有限公司
英文描述： Integrated Quad Half-Bridge and Triple High-Side with Embedded MCU and LIN for High End Mirror
中文描述： 綜合四半橋和三高的嵌入式微控制器和LIN高端側(cè)鏡
文件頁(yè)數(shù)： 6/62頁(yè)
文件大?。?/td> 540K
代理商： 908E621_07
Analog Integrated Circuit Device Data
Freescale Semiconductor
6
908E621
MAXIMUM RATINGS
MAXIMUM RATINGS
Table 2. Maximum Ratings
All voltages are with respect to ground unless otherwise noted. Exceeding limits on any terminal may cause permanent
damage to the device.
Rating
Symbol
Value
Unit
ELECTRICAL RATINGS
Supply Voltage
Analog Chip Supply Voltage under Normal Operation (Steady-State)
Analog Chip Supply Voltage under Transient Conditions
(1)
MCU Chip Supply Voltage
V
SUP(SS)
V
SUP(
PK
)
V
DD
-0.3 to 28
-0.3 to 40
-0.3 to 5.5
V
Input Terminal Voltage
Analog Chip
Microcontroller Chip
V
IN(ANALOG)
V
IN(MCU)
-0.3 to 5.5
V
SS
-0.3 to V
DD
+0.3
V
Maximum Microcontroller Current per Terminal
All Terminals except VDD, VSS, PTA0:PTA4
PTA0:PTA4
I
PIN(1)
I
PIN(2)
±15
±25
mA
Maximum Microcontroller VSS Output Current
I
MVSS
100
mA
Maximum Microcontroller VDD Input Current
I
MVDD
100
mA
LIN Supply Voltage
Normal Operation (Steady-State)
Transient Input Voltage (per ISO7637 Specification) and with
External Components
(Figure 4,
page
18)
V
BUS(SS)
V
BUS(
PK
)
-18 to 40
-150 to 100
V
ESD Voltage
(2)
Human Body Model H0 terminal
Human Body Model all other terminals
Machine Model
Charge Device Model
V
ESD1-1
V
ESD1-2
V
ESD2
V
ESD3
±1000
±2000
±200
±750
V
Notes
1.
2.
Transient capability for pulses with a time of t < 0.5 sec.
ESD1 testing is performed in accordance with the Human Body Model (C
ZAP
=100 pF, R
ZAP
=1500
), the Machine Model
(C
ZAP
=200 pF, R
ZAP
=0
) and the Charge Device Model, Robotic (C
ZAP
=4.0 pF).
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