參數(shù)資料
型號: 908E621_07
廠商: 飛思卡爾半導(dǎo)體(中國)有限公司
英文描述: Integrated Quad Half-Bridge and Triple High-Side with Embedded MCU and LIN for High End Mirror
中文描述: 綜合四半橋和三高的嵌入式微控制器和LIN高端側(cè)鏡
文件頁數(shù): 11/62頁
文件大?。?/td> 540K
代理商: 908E621_07
Analog Integrated Circuit Device Data
Freescale Semiconductor
11
908E621
STATIC ELECTRICAL CHARACTERISTICS
HIGH-SIDE OUTPUT HS1
Switch On Resistance
T
J
= 25
°
C, I
LOAD
= 1.0 A
R
DS(ON)-HS1
185
225
m
Overcurrent Shutdown
I
HSOC1
6.0
9.0
A
Overcurrent Shutdown blanking time
(15)
t
OCB
4-8
μs
Current to Voltage Ratio
(16)
V
ADOUT
[V] / I
HS
[A], (measured and trimmed I
HS
= 2 A)
CR
RATIOHS1
0.84
1.2
1.56
V/A
High-Side Switching Frequency
(15)
f
PWMHS
25
kHz
High-Side Free-Wheeling Diode Forward Voltage
T
J
= 25
°
C, I
LOAD
= 1 A
V
HSF
0.9
V
Leakage Current
I
LeakHS
<0.2
10
μA
HIGH-SIDE OUTPUTS HS2 AND HS3
(17)
Switch On Resistance
T
J
= 25
°
C, I
LOAD
= 1.0 A
R
DS(ON)-HS23
440
500
m
Overcurrent Shutdown
I
HSOC23
3.6
5.6
A
Overcurrent Shutdown blanking time
(15)
t
OCB
4-8
μs
Current to Voltage Ratio
(16)
V
ADOUT
[V] / I
HS
[A], (measured and trimmed I
HS
= 2 A)
CR
RATIOHS23
1.16
1.66
2.16
V/A
High-Side Switching Frequency
(15)
f
PWMHS
25
kHz
High-Side Free-Wheeling Diode Forward Voltage
T
J
= 25
°
C, I
LOAD
= 1 A
V
HSF
0.9
V
Leakage Current
I
LeakHS
<0.2
10
μA
Notes
15.
16.
17.
This parameter is guaranteed by process monitoring but is not production tested.
This parameter is guaranteed only if correct trimming was applied.
The high-side HS3 can be only used for resistive loads.
Table 3. Static Electrical Characteristics (continued)
All characteristics are for the analog chip only. Refer to the 68HC908EY16 datasheet for characteristics of the microcontroller
chip. Characteristics noted under conditions 9.0 V
V
SUP
16 V, -40
°
C
T
J
125
°
C unless otherwise noted. Typical values
noted reflect the approximate parameter mean at T
A
= 25
°
C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
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