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參數(shù)資料
| 型號： | 908E621_07 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | Integrated Quad Half-Bridge and Triple High-Side with Embedded MCU and LIN for High End Mirror |
| 中文描述： | 綜合四半橋和三高的嵌入式微控制器和LIN高端側(cè)鏡 |
| 文件頁數(shù)： | 10/62頁 |
| 文件大?。?/td> | 540K |
| 代理商： | 908E621_07 |
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Analog Integrated Circuit Device Data
Freescale Semiconductor
10
908E621
STATIC ELECTRICAL CHARACTERISTICS
LIN PHYSICAL LAYER
LIN Transceiver Output Voltage
Recessive State, TXD HIGH, I
OUT
= 1.0
μ
A
Dominant State, TXD LOW, 500
External Pullup Resistor
V
LIN_REC
V
LIN_DOM
V
SUP
-1
—
—
—
—
1.4
V
Normal Mode Pullup Resistor to VSUP
R
PU
20
30
47
k
Stop, Sleep Mode Pullup Current Source
I
PU
—
20
—
μ
A
Output Current Shutdown Threshold
I
BLIM
100
230
280
mA
Output Current Shutdown Timing
I
BLS
5.0
–
40
μs
Leakage Current to GND
V
SUP
Disconnected, V
BUS
at 18V
Recessive state, 8V
≤
V
SUP
≤
18V, 8V
≤
V
BUS
≤
18V, V
BUS
≥
V
SUP
GND Disconnected, V
GND
= V
SUP
, V
BUS
at -18V
I
BUS
I
BUS-PAS-REC
I
BUS-NOGND
–
0.0
-1.0
1.0
3.0
–
10
20
1.0
μA
μA
mA
LIN Receiver
Receiver Threshold Dominant
Receiver Threshold Recessive
Receiver Threshold Center
Receiver Threshold Hysteresis
V
BUS_DOM
V
BUS_REC
V
BUS_CNT
V
BUS_HYS
–
0.6
0.475
–
–
–
0.5
–
0.4
–
0.525
0.175
VSUP
Table 3. Static Electrical Characteristics (continued)
All characteristics are for the analog chip only. Refer to the 68HC908EY16 datasheet for characteristics of the microcontroller
chip. Characteristics noted under conditions 9.0 V
≤
V
SUP
≤
16 V, -40
°
C
≤
T
J
≤
125
°
C unless otherwise noted. Typical values
noted reflect the approximate parameter mean at T
A
= 25
°
C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
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