參數(shù)資料
型號(hào): 75V16F64GS16
廠商: Integrated Silicon Solution, Inc.
英文描述: 64 Mbit FLASH MEMORY AND 16 Mbit PSEUDO SRAM STACKED MULTI-CHIP PACKAGE (MCP)
中文描述: 64兆位閃存和16兆位偽靜態(tài)存儲(chǔ)器堆疊式多芯片封裝(MCP)技術(shù)
文件頁(yè)數(shù): 43/50頁(yè)
文件大?。?/td> 255K
代理商: 75V16F64GS16
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
PRELIMINARY INFORMATION
Rev. 00A
08/01/02
43
75V16F64GS16
ISSI
PSRAM READ / WRITE TIMING
(READ =
OE
Control, WRITE =
WE
Control)
Address
CE
1r
DQ
OE
Write Data Input
tOEH
tOHZ
Write Address
tWR
tOE
tASO
WE
UB, LB
tAS
tRC
Read Address
tOES
tDH
Read Data Output
tOH
tBH
tOLZ
tOHAH
tBS
Low
Note:
CE
1r can be tied to Low for
WE
and
OE
controlled operation. When
CE
1r is tied to Low, output
is exclusively controlled O
E
.
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