參數(shù)資料
型號(hào): 75V16F64GS16
廠商: Integrated Silicon Solution, Inc.
英文描述: 64 Mbit FLASH MEMORY AND 16 Mbit PSEUDO SRAM STACKED MULTI-CHIP PACKAGE (MCP)
中文描述: 64兆位閃存和16兆位偽靜態(tài)存儲(chǔ)器堆疊式多芯片封裝(MCP)技術(shù)
文件頁(yè)數(shù): 39/50頁(yè)
文件大?。?/td> 255K
代理商: 75V16F64GS16
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
PRELIMINARY INFORMATION
Rev. 00A
08/01/02
39
75V16F64GS16
ISSI
PSRAM READ TIMING
(Address Access after
OE
Control Access)
PSRAM READ TIMING
(Address Access after
CE
1r Control Access)
Address
(A19-A2)
CE
1r
OE
DQ
(Input)
Address Valid
tRC
tAA
tRC
tOHAH
tOHZ
Valid Data Input
Valid Data Input
tOH
tOLAH
tOH
tASO
Address Valid (No change)
tAX
Address Valid
Address Valid
tOLZ
tOE
Address
(A1, A0)
Address
(A19-A2)
CE
1r
DQ
(Input)
Address Valid
tRC
tAA
tRC
tCHAH
OE
tCHZ
Valid Data Input
Valid Data Input
tOH
tCLAH
tOH
tASC
Address Valid (No change)
tAX
Address Valid
Address Valid
tCLZ
tCE
Address
(A1, A0)
Note: CE2r and
WE
must be High during read cycle.
Note: CE2r and
WE
must be High during read cycle.
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