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參數(shù)資料
| 型號： | 75V16F64GS16 |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 64 Mbit FLASH MEMORY AND 16 Mbit PSEUDO SRAM STACKED MULTI-CHIP PACKAGE (MCP) |
| 中文描述： | 64兆位閃存和16兆位偽靜態(tài)存儲器堆疊式多芯片封裝（MCP）技術(shù) |
| 文件頁數(shù)： | 20/50頁 |
| 文件大?。?/td> | 255K |
| 代理商： | 75V16F64GS16 |
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Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
PRELIMINARY INFORMATION
Rev. 00A
08/01/02
75V16F64GS16
ISSI
DC CHARACTERISTICS
(Continued)
Symbol Parameter
I
PD
r
PSRAM V
CC
Power
Down Current
Test Conditions
V
CC
r = V
CC
r max.,
V
IN
≥
V
CC
f - 0.2 V
OR
V
IN
≤
0.2 V
CE2r
≤
0.2 V, I
OUT
= 0 mA
Min.
—
Max.
10
Unit
μ
A
V
IL
V
IH
V
IH
V
ID
Input Low Level
Input High Level (Flash)
Input High Level (PSRAM)
Voltage for Autoselect
and Sector Protection
(
RESET
)
(4)
Voltage for
WP
/ACC
Sector Protection/Unprotection
and Program Acceleration
(4)
Output Low Level
(PSRAM)
Output High Level
(PSRAM)
Output Low Level
(Flash)
Output High Level
(Flash)
Flash Low Vccf
Lock-Out Voltage
-0.3
2.0
2.2
11.5
0.5
V
V
V
V
V
CC
f + 0.3
V
CC
r + 0.3
12.5
V
ACC
8.5
9.5
V
V
OL
V
CC
r = V
CC
r min., V
CCS
=V
CCS
min.
I
OL
= 1.0 mA
V
CC
r = V
CC
r min., V
CCS
=V
CCS
min.
I
OH
= -0.5 mA
V
CC
f = V
CC
f min., V
CCS
=V
CCS
min.
I
OL
= 4.0 mA
V
CC
f = V
CC
f min., V
CCS
=V
CCS
min.
I
OH
= -0.1 mA
—
0.4
V
V
OH
2.2
—
V
V
OL
—
0.45
V
V
OH
V
CC
f - 0.4
—
V
V
LKO
2.3
2.5
V
Notes:
1. ICC current listed includes both the DC operating current and the frequency dependent component.
2. ICC active while Embedded Algorithm (program or erase) is in progress.
3. Automatic sleep mode enables the low power mode when address remains stable for 150 ns.
4. Applicable for only VCCf applying.
5. Embedded Algorithm (program or erase) is in progress. (@5 MHz)
6. ISB2 r depends on VIN cycle time. Please refer to “APPENDIX A”.
.
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