參數(shù)資料
型號(hào): 75V16F64GS16
廠商: Integrated Silicon Solution, Inc.
英文描述: 64 Mbit FLASH MEMORY AND 16 Mbit PSEUDO SRAM STACKED MULTI-CHIP PACKAGE (MCP)
中文描述: 64兆位閃存和16兆位偽靜態(tài)存儲(chǔ)器堆疊式多芯片封裝(MCP)技術(shù)
文件頁(yè)數(shù): 28/50頁(yè)
文件大?。?/td> 255K
代理商: 75V16F64GS16
28
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
PRELIMINARY INFORMATION
Rev. 00A
08/01/02
75V16F64GS16
ISSI
FLASH WRITE CYCLE
(
CEf
CONTROL)
Notes:
1
. PA is address of the memory location to be programmed.
2. PD is data to be programmed at byte address.
3.
DQ
7 is the output of the complement of the data written to the device.
4. DOUT is the output of the data written to the device.
5. Figure indicates last two bus cycles out of four bus cycle sequence.
Address
DQ
CE
f
OE
WE
AOh
DQ
7
Dout
PA
555h
PA
Data
Polling
PD
t
AS
3rd Bus Cycle
t
AH
t
WC
t
DS
t
DH
t
WHWH1
t
WS
t
WH
t
GHEL
t
CP
t
CPH
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