參數(shù)資料
型號: 75V16F64GS16
廠商: Integrated Silicon Solution, Inc.
英文描述: 64 Mbit FLASH MEMORY AND 16 Mbit PSEUDO SRAM STACKED MULTI-CHIP PACKAGE (MCP)
中文描述: 64兆位閃存和16兆位偽靜態(tài)存儲器堆疊式多芯片封裝(MCP)技術(shù)
文件頁數(shù): 42/50頁
文件大?。?/td> 255K
代理商: 75V16F64GS16
42
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
PRELIMINARY INFORMATION
Rev. 00A
08/01/02
75V16F64GS16
ISSI
PSRAM READ / WRITE TIMING
(
CE
1r Control)
PSRAM READ / WRITE TIMING
(READ =
OE
Control, WRITE =
WE
Control)
Address
CE
1r
DQ
OE
Write Data Input
tOEH
tWH
tCHZ
tWRC (Min)
Write Address
tWS
tCE
tWRC
tCP
tASC
WE
UB, LB
tBH
tAS
tRC
Read Address
tCLz
tOHCL
tOH
Read Data Output
tOH
tWH
tWS
tCHAH
tBS
Note: CE2r must be High during write cycle.
Address
CE
1r
DQ
tWC
OE
Write Data Input
tOHZ
tOES
tBS
Write Address
tDS
tDH
tWP
tWR
tASO
tBH
WE
UB, LB
tOHAH
tAS
tAH
Read Address
tOEH
tOLz
tOH
Read Data Output
Low
Note: CE1r can be tied to Low for
WE
and
OE
controlled operation. When
CE
1r is tied to Low, output is
exclusively controlled by
OE
.
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