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參數(shù)資料
| 型號(hào)： | μPD45D128164 |
| 廠商： | NEC Corp. |
| 英文描述： | 128 M-bit Synchronous DRAM with Double Data Rate(128 同步動(dòng)態(tài)RAM) |
| 中文描述： | 128 M位同步雙數(shù)據(jù)速率（128同步動(dòng)態(tài)RAM的內(nèi)存） |
| 文件頁(yè)數(shù)： | 37/80頁(yè) |
| 文件大?。?/td> | 637K |
| 代理商： | ΜPD45D128164 |
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37
μ
PD45D128442, 45D128842, 45D128164
Preliminary Data Sheet
13. Electrical Specifications
All voltages are referenced to V
SS
(GND).
After power up, wait more than 100
μ
s and then, execute
Power on sequence and CBR (auto) Refresh
before
proper device operation is achieved.
13.1 Absolute Maximum Ratings
Parameter
Symbol
Condition
Rating
Unit
Voltage on power supply pin relative to V
SS
V
CC
, V
CC
Q
0.5 to +3.6
V
Voltage on any pin relative to V
SS
V
T
0.5 to +3.6
V
Short circuit output current
I
O
50
mA
Power dissipation
P
D
1
W
Storage temperature
T
stg
55 to + 125
°
C
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum
Rating conditions for extended periods may affect device reliability.
13.2 Recommended Operating Conditions
Parameter
Symbol
Condition
MIN.
TYP.
MAX.
Unit
Supply voltage
V
CC
2.375
2.5
2.625
V
Supply voltage for DQ, DQS
V
CC
Q
2.375
2.5
2.625
V
Input reference voltage
V
REF
1.1875
1.25
1.3125
V
Termination voltage
V
TT
V
REF
0.04
V
REF
V
REF
+ 0.04
V
High level dc input voltage
V
IH
(DC)
V
REF
+ 0.18
V
cc
+ 0.3
V
Low level dc input voltage
V
IL
(DC)
0.3
V
REF
0.18
V
Operating ambient temperature
T
A
0
70
°
C
13.3 Pin Capacitance (T
A
= 25
°
C, f = 1 MHz)
Parameter
Symbol
Condition
MIN.
TYP. MAX. Unit
Input capacitance
C
I1
A0 - A11, BA0, BA1
2.5
5
pF
C
I2
CLK, /CLK, CKE, /CS, /RAS, /CAS, /WE, DM, LDM, UDM
2.5
5
pF
Data input/output capacitance
C
IO1
DQS, LDQS, UDQS
4
6.5
pF
C
IO2
DQ0 - DQ15
4
6.5
pF
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