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| 型號(hào)： | XC866L-4RR |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 元件分類： | 8位微控制器 |
| 英文描述： | 8-bit Microcontroller with 2/4/8K Bytes In-System Programmable Flash |
| 中文描述： | 8位微控制器與2/4/8K字節(jié)在系統(tǒng)可編程閃存 |
| 文件頁(yè)數(shù)： | 40/108頁(yè) |
| 文件大?。?/td> | 979K |
| 代理商： | XC866L-4RR |
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XC866
Functional Description
Data Sheet
36
V1.0, 2006-02
3.3.2
Flash Programming Width
For the P-Flash banks, a programmed wordline (WL) must be erased before it can be
reprogrammed as the Flash cells can only withstand one gate disturb. This means that
the entire sector containing the WL must be erased since it is impossible to erase a
single WL.
For the D-Flash bank, the same WL can be programmed twice before erasing is required
as the Flash cells are able to withstand two gate disturbs. Hence, it is possible to
program the same WL, for example, with 16 bytes of data in two times (see
Figure 11
).
Figure 11
D-Flash Programming
Note: When programming a D-Flash WL the second time, the previously programmed
Flash memory cells (whether 0s or 1s) should be reprogrammed with 0s to retain
its original contents and to prevent “over-programming”.
0000 ….. 0000
H
0000 ….. 0000
H
32 bytes (1 WL)
1111 ….. 1111
H
0000 ….. 0000
H
16 bytes
16 bytes
0000 ….. 0000
H
1111 ….. 1111
H
Flash memory cells
32-byte write buffers
1111 ….. 0000
H
1111 ….. 1111
H
0000 ….. 0000
H
1111 ….. 0000
H
Program 1
Program 2
Note: A Flash memory cell can be programmed
from 0 to 1, but not from 1 to 0.
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