參數(shù)資料
型號： XC4052XL-3HQ304I
廠商： Xilinx Inc
文件頁數(shù)： 4/68頁
文件大小： 0K
描述： IC FPGA I-TEMP 3.3V 3SPD 304HQFP
產(chǎn)品變化通告： XC4000(XL,XLA,E) Discontinuation 15/Nov/2004
標(biāo)準(zhǔn)包裝： 12
系列： XC4000E/X
LAB/CLB數(shù)： 1936
邏輯元件/單元數(shù)： 4598
RAM 位總計： 61952
輸入/輸出數(shù)： 256
門數(shù)： 52000
電源電壓： 3 V ~ 3.6 V
安裝類型： 表面貼裝
工作溫度： -40°C ~ 100°C
封裝/外殼： 304-BFQFP 裸露焊盤
供應(yīng)商設(shè)備封裝： 304-PQFP（40x40）
R
XC4000E and XC4000X Series Field Programmable Gate Arrays
6-16
May 14, 1999 (Version 1.6)
Figure 8 shows the write timing for level-sensitive, sin-
gle-port RAM.
The relationships between CLB pins and RAM inputs and
outputs for single-port level-sensitive mode are shown in
Figure 9 and Figure 10 show block diagrams of a CLB con-
gured as 16x2 and 32x1 level-sensitive, single-port RAM.
Initializing RAM at Conguration
Both RAM and ROM implementations of the XC4000
Series devices are initialized during conguration. The ini-
tial contents are dened via an INIT attribute or property
attached to the RAM or ROM symbol, as described in the
schematic library guide. If not dened, all RAM contents
are initialized to all zeros, by default.
RAM initialization occurs only during conguration. The
RAM content is not affected by Global Set/Reset.
Table 7: Single-Port Level-Sensitive RAM Signals
G'
G1 G4
F1 F4
WRITE
DECODER
1 of 16
DIN
16-LATCH
ARRAY
X6748
4
MUX
F'
WRITE
DECODER
1 of 16
DIN
16-LATCH
ARRAY
READ
ADDRESS
READ
ADDRESS
WRITE PULSE
LATCH
ENABLE
LATCH
ENABLE
K
(CLOCK)
WRITE PULSE
MUX
4
C1 C4
4
WE
D1
D0
EC
Figure 7: 16x1 Edge-Triggered Dual-Port RAM
RAM Signal
CLB Pin
Function
D
D0 or D1
Data In
A[3:0]
F1-F4 or G1-G4
Address
WE
Write Enable
O
F’ or G’
Data Out
WC
T
ADDRESS
WRITE ENABLE
DATA IN
AS
T
WP
T
DS
T
DH
T
REQUIRED
AH
T
X6462
Figure 8: Level-Sensitive RAM Write Timing
Product Obsolete or Under Obsolescence
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