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參數(shù)資料
| 型號： | W987X6CBG80 |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | DRAM |
| 英文描述： | 8M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 |
| 封裝： | 8 X 9 MM, 1.20 MM HEIGHT, FBGA-54 |
| 文件頁數(shù)： | 12/46頁 |
| 文件大?。?/td> | 1634K |
| 代理商： | W987X6CBG80 |
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Preliminary W987X6CB
- 2 -
Interleaved Bank Read (Burst Length = 8, CAS Latency = 3, Auto Precharge).............................27
Interleaved Bank Write (Burst Length = 8) .....................................................................................28
Interleaved Bank Write (Burst Length = 8, Auto Precharge) ..........................................................29
Page Mode Read (Burst Length = 4, CAS Latency = 3) ................................................................30
Page Mode Read/Write (Burst Length = 8, CAS Latency = 3) .......................................................31
Auto Precharge Read (Burst Length = 4, CAS Latency = 3)..........................................................32
Auto Precharge Write (Burst Length = 4) .......................................................................................33
Auto Refresh Cycle.........................................................................................................................34
Self Refresh Cycle ..........................................................................................................................35
Burst Read and Single Write (Burst Length = 4, CAS Latency = 3) ...............................................36
Power Down Mode .........................................................................................................................37
Auto Precharge Timing (Read Cycle).............................................................................................38
Auto Precharge Timing (Write Cycle) .............................................................................................39
Timing Chart of Read to Write Cycle ..............................................................................................40
Timing Chart of Write to Read Cycle ..............................................................................................40
Timing Chart of Burst Stop Cycle (Burst Stop Command) .............................................................41
Timing Chart of Burst Stop Cycle (Precharge Command) .............................................................41
CKE/DQM Input Timing (Write Cycle) ............................................................................................42
CKE/DQM Input Timing (Read Cycle) ............................................................................................43
Self Refresh/Power Down Mode Exit Timing..................................................................................44
15. PACKAGE DIMENSION ..................................................................................................................45
16. REVISION HISTORY.......................................................................................................................46
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PDF描述 |
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| WS128K32-70G4I | 512K X 8 MULTI DEVICE SRAM MODULE, 70 ns, CQFP68 |
| WS128K32-85G4I | 512K X 8 MULTI DEVICE SRAM MODULE, 85 ns, CQFP68 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W987Y6CBN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:DRAM |
| W987Z6CBN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:DRAM |
| W988D2FB | 制造商:WINBOND 制造商全稱:Winbond 功能描述:256Mb Mobile LPSDR |
| W988D2FBJX6E | 制造商:Winbond Electronics Corp 功能描述:IC LPSDR SDRAM 256MBIT 90VFBGA |
| W988D2FBJX6I | 制造商:WINBOND 制造商全稱:Winbond 功能描述:256Mb Mobile LPSDR |
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