參數資料
型號: W29GL064CB7S
廠商: WINBOND ELECTRONICS CORP
元件分類: PROM
英文描述: 64M X 1 FLASH 3V PROM, 70 ns, PDSO48
封裝: 12 X 20 MM, GREEN, TSOP-48
文件頁數: 32/65頁
文件大?。?/td> 648K
代理商: W29GL064CB7S
W29GL064C
32
8.5
AC Characteristics
Description
Symbol
VCC=2.7V~3.6V
Min
Max
Units
Valid Data Output after Address
EVIO=VCC
tAA
70
ns
EVIO=1.65V to VCC
80
ns
Page Access Time
EVIO=VCC
tPA
25
ns
EVIO=1.65V to VCC
35
ns
Valid data output after #CE low
EVIO=VCC
tCE
70
ns
EVIO=1.65V to VCC
80
ns
Valid data output after #OE low
EVIO=VCC
tOE
25
ns
EVIO=1.65V to VCC
35
ns
Read Period Time
EVIO=VCC
tRC
70
ns
EVIO=1.65V to VCC
80
ns
Data Output High Impedance after #OE high
tDF
20
ns
Data Output High Impedance after #CE high
tDF
20
ns
Output Hold Time from the earliest rising edge of address,
#CE, #OE
tOH
0
ns
Write Period Time
tWC
70
ns
Address Setup Time
tAS
0
ns
Address Setup Time to #OE low during Toggle Bit Polling
tASO
15
ns
Address Hold Time
tAH
45
ns
Address Hold Time from #CE or #OE High during Toggle Bit
Polling
tAHT
0
ns
Data Setup Time
tDS
30
ns
Data Hold Time
tDH
0
ns
VCC Setup Time
tVCS
35
s
Chip enable Setup Time
tCS
0
ns
Chip enable Hold Time
tCH
0
ns
Output enable Setup Time
tOES
0
ns
Output enable Hold Time
Read
tOEH
0
ns
Toggle & Data# Polling
10
ns
#WE Setup Time
tWS
0
ns
#WE Hold Time
tWH
0
ns
#CE Pulse Width
tCEPW
35
ns
#CE Pulse With High
tCEPWH
30
ns
#WE Pulse Width
tWP
35
ns
#WE Pulse Width High
tWPH
30
ns
Program/Erase active time by
RY/#BY
EVIO=VCC
tBUSY
70
ns
EVIO=1.65V to VCC
80
ns
Read Recover Time before Write (#OE High to #WE Low)
tGHWL
0
ns
Read Recover Time before Write (#OE High to #CE Low)
tGHEL
0
ns
16-Word Write Buffer Program Operation
tWHWH1
96
s
Effective Write Buffer Program
Operation
Word
tWHWH1
6
s
Accelerated Effective Write Buffer
Operation
Per Word
tWHWH1
4.8
s
Program Operation
Byte
tWHWH1
6
200
s
Program Operation
Word
tWHWH1
6
200
s
ACC 16-Word Program Operation
tWHWH1
77
s
Sector Erase Operation
tWHWH2
0.15
1
Sec
Sector Erase Timeout
tSEA
50
s
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