- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄203625 > W28F321TB70L (WINBOND ELECTRONICS CORP) 2M X 16 FLASH 1.8V PROM, 70 ns, PBGA48 PDF資料下載
參數(shù)資料
| 型號： | W28F321TB70L |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | PROM |
| 英文描述： | 2M X 16 FLASH 1.8V PROM, 70 ns, PBGA48 |
| 封裝： | 7 X 7 MM, 0.75 MM PITCH, TFBGA-48 |
| 文件頁數(shù)： | 17/28頁 |
| 文件大小： | 372K |
| 代理商： | W28F321TB70L |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁當前第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁
W28F321BB/TB
- 24 -
4. If #RESET asserted while a block erase, full chip erase, (page buffer) program or OTP program operation is not executing,
the reset will complete within 100ns.
5. When the device power-up, holding #RESET low minimum 100ns is required after VDD has been in predefined range and also
has been in stable there.
Block Erase, Full Chip Erase, (Page Buffer) Program and OTP Program
Performance(3)
VDD = 2.7V to 3.6V, TA = -40°C to +85°C
VPP = VPPH1
(IN SYSTEM)
VPP = VPPH2
(IN MANUFACTURING)
PARAMETER
SYM.
PAGE BUFFER
COMMAND IS
USED OR NOT
USED
MIN. TYP.
(1) MAX.(2) MIN. TYP.(1) MAX.(2)
UNIT
Not Used
0.05
0.3
0.04
0.12
S
4K-Word Parameter Block
Program Time (note 2)
tWPB
Used
0.03
0.12
0.02
0.06
S
Not Used
0.38
2.4
0.31
1.0
S
32K-Word Main Block
Program Time (note 2)
tWMB
Used
0.24
1.0
0.17
0.5
S
Not Used
11
200
9
185
S
Word Program Time (note 2)
tWHQV1/
tEHQV1
Used
7
100
5
90
S
OTP Program Time (note 2)
tWHOV1/
tEHOV1
Not Used
36
400
27
185
S
4K-Word Parameter Block
Erase Time (note 2)
tWHQV2/
tEHQV2
-
0.3
4
0.2
4
S
32K-Word Main Block Erase
Time (note 2)
tWHQV3/
tEHQV3
-
0.6
5
0.5
5
S
Full Chip Erase Time (note 2)
40
350
S
(Page Buffer) Program
Suspend Latency Time to
Read (note 4)
tWHRH1/
tEHRH1
-
5
10
5
10
S
Block Erase Suspend Latency
Time to Read (note 4)
tWHRH2/
tEHRH2
-
5
20
5
20
S
Latency Time from Block
Erase Resume Command to
Block Erase Suspend
Command (note 5)
tERES
-
500
S
Notes:
1. Typical values measured at VDD = 3.0V, VPP = 3.0V or 12V, and TA=+25°C. Assumes corresponding lock bits are not set.
Subject to change based on device characterization.
2. Excludes external system-level overhead.
3. Sampled, but not 100% tested.
4. A latency time is required from writing suspend command (#WE or #CE going high) until SR.7 going "1".
5. If the interval time from a Block Erase Resume command to a subsequent Block Erase Suspend command is shorter than
tERES and its sequence is repeated, the block erase operation may not be finished.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| W29C010-70 | 128K X 8 FLASH 5V PROM, 70 ns, PDIP32 |
| W29C010-45 | 128K X 8 FLASH 5V PROM, 45 ns, PDIP32 |
| W29C020C-90Z | 256K X 8 FLASH 5V PROM, 90 ns, PDIP32 |
| W29D040C-55C | 512K X 8 FLASH 5V PROM, 55 ns, PDIP32 |
| W29D040CT55C | 512K X 8 FLASH 5V PROM, 55 ns, PDSO32 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W28F641B | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64MBIT (4MBIT × 16) PAGE MODE DUAL WORK FLASH MEMORY |
| W28F641BB80L | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64MBIT (4MBIT × 16) PAGE MODE DUAL WORK FLASH MEMORY |
| W28F641BT80L | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64MBIT (4MBIT × 16) PAGE MODE DUAL WORK FLASH MEMORY |
| W28F641TB80L | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64MBIT (4MBIT × 16) PAGE MODE DUAL WORK FLASH MEMORY |
| W28F641TT80L | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64MBIT (4MBIT × 16) PAGE MODE DUAL WORK FLASH MEMORY |
發(fā)布緊急采購，3分鐘左右您將得到回復。