- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄203625 > W28F321TB70L (WINBOND ELECTRONICS CORP) 2M X 16 FLASH 1.8V PROM, 70 ns, PBGA48 PDF資料下載
參數(shù)資料
| 型號： | W28F321TB70L |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | PROM |
| 英文描述： | 2M X 16 FLASH 1.8V PROM, 70 ns, PBGA48 |
| 封裝： | 7 X 7 MM, 0.75 MM PITCH, TFBGA-48 |
| 文件頁數(shù)： | 14/28頁 |
| 文件大?。?/td> | 372K |
| 代理商： | W28F321TB70L |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁當(dāng)前第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁
W28F321BB/TB
Publication Release Date: February 17, 2003
- 21 -
Revision A2
AC Characteristics - Write Operations(1,2)
VDD = 2.7V to 3.6V, TA = -40°C to +85°C
PARAMETER
SYM.
MIN.
MAX.
UNIT
Write Cycle Time
tAVAV
70
nS
#RESET High Recovery to #WE(#CE) Going Low (note 3)
tPHWL(tPHEL)
150
nS
#CE(#WE) Setup to #WE(#CE) Going Low (note 4)
tELWL(tWLEL)
0
nS
#WE(#CE) Pulse Width (note 4)
tWLWH(tELEH)
60
nS
Data Setup to #WE(#CE) Going High (note 8)
tDVWH(tDVEH)
40
nS
Address Setup to #WE(#CE) Going High (note 8)
tAVWH(tAVEH)
50
nS
#CE(#WE) Hold from #WE(#CE) High
tWHEH(tEHWH)
0
nS
Data Hold from #WE(#CE) High
tWHDX(tEHDX)
0
nS
Address Hold from #WE(#CE) High
tWHAX(tEHAX)
0
nS
#WE(#CE) Pulse Width High (note 5)
tWHWL(tEHEL)
30
nS
#WP High Setup to #WE(#CE) Going High (note 3)
tSHWH(tSHEH)
0
nS
VPP Setup to #WE(#CE) Going High (note 3)
tVVWH(tVVEH)
200
nS
Write Recovery before Read
tWHGL(tEHGL)
30
nS
#WP High Hold from Valid SRD (note 3, 6)
tQVSL
0
nS
VPP Hold from Valid SRD (note 3, 6)
tQVVL
0
nS
#WE(#CE) High to SR.7 Going "0" (note 3, 7)
tWHR0(tEHR0)
tAVQV+40
nS
Notes:
1. The timing characteristics for reading the status register during block erase, full chip erase, (page buffer) program and OTP
program operations are the same as during read-only operations. Refer to AC Characteristics for read-only operations.
2. A write operation can be initiated and terminated with either #CE or #WE.
3. Sampled, not 100% tested.
4. Write pulse width (tWP) is defined from the falling edge of #CE or #WE (whichever goes low last) to the rising edge of #CE or
#WE (whichever goes high first). Hence, tWP = tWLWH = tELEH = tWLEH = tELWH.
5. Write pulse width high (tWPH) is defined from the rising edge of #CE or #WE (whichever goes high first) to the falling edge of
#CE or #WE (whichever goes low last). Hence, tWPH = tWHWL = tEHEL = tWHEL = tEHWL.
6. VPP should be held at VPP = VPPH1/2 until determination of block erase, (page buffer) program or OTP program success
(SR.1/3/4/5 = 0) and held at VPP = VPPH1 until determination of full chip erase success (SR.1/3/5 = 0).
7. tWHR0 (tEHR0) after the Read Query or Read Identifier Codes/OTP command=tAVQV+100ns.
8. Refer to Table 6 for valid address and data for block erase, full chip erase, (page buffer) program, OTP program or lock bit
configuration.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| W29C010-70 | 128K X 8 FLASH 5V PROM, 70 ns, PDIP32 |
| W29C010-45 | 128K X 8 FLASH 5V PROM, 45 ns, PDIP32 |
| W29C020C-90Z | 256K X 8 FLASH 5V PROM, 90 ns, PDIP32 |
| W29D040C-55C | 512K X 8 FLASH 5V PROM, 55 ns, PDIP32 |
| W29D040CT55C | 512K X 8 FLASH 5V PROM, 55 ns, PDSO32 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W28F641B | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64MBIT (4MBIT × 16) PAGE MODE DUAL WORK FLASH MEMORY |
| W28F641BB80L | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64MBIT (4MBIT × 16) PAGE MODE DUAL WORK FLASH MEMORY |
| W28F641BT80L | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64MBIT (4MBIT × 16) PAGE MODE DUAL WORK FLASH MEMORY |
| W28F641TB80L | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64MBIT (4MBIT × 16) PAGE MODE DUAL WORK FLASH MEMORY |
| W28F641TT80L | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64MBIT (4MBIT × 16) PAGE MODE DUAL WORK FLASH MEMORY |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。