參數(shù)資料
型號(hào)： W25X16-VSFI
廠商： WINBOND ELECTRONICS CORP
元件分類： PROM
英文描述： 16M X 1 FLASH 2.7V PROM, PDSO16
封裝： 0.300 INCH, SOIC-16
文件頁數(shù)： 22/47頁
文件大小： 1317K
代理商： W25X16-VSFI
W25X16, W25X32, W25X64
Publication Release Date: June 28, 2006
- 29 -
Preliminary - Revision B
11.2.15 Release Power-down / Device ID (ABh)
The Release from Power-down / Device ID instruction is a multi-purpose instruction. It can be used to
release the device from the power-down state, obtain the devices electronic identification (ID) number
or do both.
When used only to release the device from the power-down state, the instruction is issued by driving
the /CS pin low, shifting the instruction code “ABh” and driving /CS high as shown in figure 16. After
the time duration of tRES1 (See AC Characteristics) the device will resume normal operation and other
instructions will be accepted. The /CS pin must remain high during the tRES1 time duration.
When used only to obtain the Device ID while not in the power-down state, the instruction is initiated
by driving the /CS pin low and shifting the instruction code “ABh” followed by 3-dummy bytes. The
Device ID bits are then shifted out on the falling edge of CLK with most significant bit (MSB) first as
shown in figure 17. The Device ID values for the W25X16, W25X32, AND W25X64 are listed in
Manufacturer and Device Identification table. The Device ID can be read continuously. The instruction
is completed by driving /CS high.
When used to release the device from the power-down state and obtain the Device ID, the instruction
is the same as previously described, and shown in figure 15, except that after /CS is driven high it
must remain high for a time duration of tRES2 (See AC Characteristics). After this time duration the
device will resume normal operation and other instructions will be accepted.
If the Release from Power-down / Device ID instruction is issued while an Erase, Program or Write
cycle is in process (when BUSY equals 1) the instruction is ignored and will not have any effects on
the current cycle
Figure 16. Release Power-down Instruction Sequence
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W25X16VSFIG 功能描述:IC FLASH 16MBIT 75MHZ 16SOIC RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:SpiFlash® 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:移動(dòng) SDRAM 存儲(chǔ)容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2
W25X16VSFIG T&R 功能描述:IC FLASH 16MBIT 75MHZ 16SOIC RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:SpiFlash® 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:移動(dòng) SDRAM 存儲(chǔ)容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2
W25X16VSFIZ 制造商:WINBOND 制造商全稱:Winbond 功能描述:16M-BIT, 32M-BIT, AND 64M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI
W25X16VSSI 制造商:WINBOND 制造商全稱:Winbond 功能描述:16M-BIT, 32M-BIT, AND 64M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI
W25X16VSSIG 功能描述:IC FLASH 16MBIT 75MHZ 8SOIC RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:SpiFlash® 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:移動(dòng) SDRAM 存儲(chǔ)容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2
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